LL4150
SURFACE MOUNT FAST SWITCHING DIODE
POWER SEMICONDUCTOR
Features
•
•
•
•
Ideal for Fast Logic Applications
Ultra Fast Switching
High Reliability
High Conductance
A
MiniMELF
Dim
A
B
C
Min
3.30
1.30
0.28
Max
3.70
1.60
0.50
C
B
Mechanical Data
•
•
•
•
•
Case: MiniMELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Marking: Cathode Band Only
Polarity: Cathode Band
Weight: 0.05 grams (approx.)
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
@ 5.0µA
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FRM
I
FSM
P
d
R
θJA
T
j
, T
STG
LL4150
75
50
35
400
200
600
1.0
4.0
500
300
-65 to +200
Unit
V
V
V
mA
mA
mA
A
mW
K/W
°C
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t
≤
1.0s
@ t = 1.0µs
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
@ T
A
= 25°C unless otherwise specified
Symbol
Min
0.54
0.66
0.76
0.82
0.87
Max
0.62
0.74
0.86
0.92
1.00
100
2.5
6.0
10
Unit
Test Condition
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 100mA
I
F
= 200mA
T
A
= 25°C
T
A
= 150°C
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 200mA,
I
rr
= 1.0 x I
R
, R
L
= 100Ω
I
F
= 200mA, V
FR
= 1.0V
Maximum Forward Voltage Drop
V
FM
V
Maximum Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Forward Recovery Time
Note:
I
RM
C
j
t
rr
t
fr
nA
µA
pF
ns
ns
1. Valid provided that electrodes are kept at ambient temperature.
DS30069 Rev. B-2
1 of 1
LL4150
详细参数
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