LITE-ON
SEMICONDUCTOR
SD09A-D SERIES
SIDACS
0.9 AMPERES RMS
105 thru 240 VOLTS
Sidac High Voltage
Sillicon Bidirectional Thyristors
FEATURES
High pulse current capability, typ=120A/us
Glass passivation insures reliable operation
Compact package, T1 Package
Max. Dynamic Holding Current -100mA
UL Recognition File # E219635
T-1
A
B
A
C
D
APPLICATION
High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators
Used to Trigger Gates of SCR's and Triacs
T-1
Dim.
A
B
C
D
Min.
25.4
2.60
0.53
2.20
Max.
-
3.20
0.64
2.60
All Dimensions in millimeter
MECHANICAL DATA
Case: JEDEC T1 molded plastic
Terminals: Lead Free Plating (Matte Tin Finish)
Component in accordance to RoHs 2002/95/EC
Weight : 0.004 ounces, 0.13 grams
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
Rating
Peak Repetitive Off– State Voltage (T
J
= -40 to 125
℃
, Sine Wave, 50 to 60 Hz)
SD09A105D, SD09A120D, SD09A130D, SD09A160D
SD09A220D, SD09A240D
V
DRM
,
V
RRM
± 90
± 180
Volts
Symbol
Value
Unit
On-State RMS Current
(T
L
= 80
℃
,
Lead Lengh=3/8” , All Conduction Angles)
I
T(RMS)
± 0.9
Amp
Peak Non-Repetitive Surge Current
60 Hz One Cycle Sine Wave (Tj = 125
℃
)
I
TSM
± 4.0
Amps
Operating Junction Temperature Range
T
J
-40 to +125
℃
Storage Temperature Range
Tstg
-40 to +150
℃
Note:
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating
conditions) and are not valid simultaneously. If these limits are exceeded, device functional
operation is not implied, damage may occur and reliability may be affected.
REV. 3, Oct-2010, KDXA01
RATING AND CHARACTERISTIC CURVES
SD09A-D SERIES
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance - Junction to Lead, Lead Length = 3/8 ”
Maximum Lead Solder Temperature
(Lead Length
≧
1/16 ” from Case, 10s Max)
RthJL
40
℃
/
W
℃
T
L
260
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current
(50 to 60 Hz Sine Wave)
I
DRM
V
DRM
=90V, SD09A105D, SD09A120D, SD09A130D, SD09A160D
V
DRM
=180V, SD09A220D, SD09A240D
----
----
5
uA
ON CHARACTERISTICS
Peak On-State Voltage
(I
TM=
1A Peak @Tp
≦
300 us, Duty Cycle
≦
2%)
Breakover Voltage
IBO= 35uA
35uA
35uA
35uA
35uA
35uA
SD09A105D
SD09A120D
SD09A130D
SD09A160D
SD09A220D
SD09A240D
V
TM
----
1.3
1.5
Volts
V
BO
95
110
120
150
210
220
----
---
---
---
---
---
---
----
110
130
140
170
230
250
100
Volts
Dynamic Holding Current
(Sine Wave, 50 to 60 Hz, R
L
=100 Ohm)
Switching Resistance
(Sine Wave, 50 to 60 Hz)
I
H
mA
Rs
0.1
----
----
k
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of On-State Current,
Critical Damped Waveform Circuit
(I
PK
= 130 A, Pulse Width = 10 us)
di/dt
----
120
----
A/us
ORDERING INFORMATION
SD
SIDAC Series
MARKING INFORMATION
105
D
Package: T1
09A
Current:
09A=0.9A
S09XXXYZ
NOTE: XXX = Voltage, Y =Year, Z = Week
Voltage:
105=105V
120=120V
130=130V
160=160V
220=220V
240=240V
RATING AND CHARACTERISTIC CURVES
SD09A-D SERIES
Legal Disclaimer Notice
SD09A-D SERIES
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm
the latest product information and specifications before final design, purchase or
use.
LSC makes no warranty, representation or guarantee regarding the suitability of
its products for any particular purpose, nor does LSC assume any liability for
application assistance or customer product design. LSC does not warrant or
accept any liability with products which are purchased or used for any
unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property
rights of LSC.
LSC products are not authorized for use as critical components in life support
devices or systems without express written approval of LSC.
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
