FR 1A 50V Thru 6A 1000V
Glass Passivated Junction Rectifiers
Features
●
Glass passivated chip
●
Low forward voltage drop
●
High current capability
●
High reliability
●
High surge current capability
●
Surface Metalization：Ni(0.6~1um)/Au(0.05um)
●
Compatible with soldering
●
Operating Junction temperature range :-55 ~ +150℃
●
Fast Recovery Rectifier
Process Details
PDPW
(pcs/4"wafer)
4,469
3,685
3,011
1,469
1,153
521
Size（mil）
B（±1）
C（±2）
10
31
10
36
10
37
58
10
10
69
10
114
Chip Part No.
Chip size
50*50mil
56*56mil
60*60mil
84*84mil
95*95mil
140*140mil
GDGF50A-M
GDGF56A-M
GDGF60A-M
GDGF84A-M
GDGF95A-M
GDGF140A-M
Maximum Ratings
A (+1/-2)
50
56
60
84
95
140
D（±0.5）
1
1
1
1
1
1
(TA = 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Maximum instantaneous forwad voltage at IF
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
V
F
I
FSM
A
50
35
50
B
100
70
100
VALUE
D
G
J
200 400 600
140
200
280
400
420
600
K
M
800 1000
560
700
800 1000
UNIT
V
V
V
A
V
A
See Next Table
See Next Table
See Next Table
Representative Parameter
Chip
size/mil
50
56
60
84
95
140
Chip
size/mil
50
56
60
84
95
140
I
F
(A)
1
1.5
1.5
2.5
3
6
I
F
(A)
1
1.5
1.5
2.5
3
6
V
F
(V)@I
F
1.25
1.25
1.25
1.25
1.25
1.25
V
F
(V)@I
F
1.25
1.25
1.25
1.25
1.25
1.25
V
BL
(V)@
I1=10μA
50½400
50½400
50½400
50½400
50½400
50½400
V
BL
(V)@
I1=10μA
600½1000
600½1000
600½1000
600½1000
600½1000
600½1000
I
R
(μA)@V
R
1
1
1
1
1
1
I
R
(μA)@V
R
1
1
1
1
1
1
T
RR
/ns
<150
<150
<150
<150
<150
<150
T
RR
/ns
<500
<500
<500
<500
<500
<500
1/1
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