JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
2SD1815
TO-251
TO-252-2L
TRANSISTOR (NPN)
FEATURES
Low collector-to-emitter saturation voltage
Excllent linearity of h
FE
High f
T
Fast switching time
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise note)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
120
100
6
3
1
150
-55 to +150
Units
V
V
V
A
W
℃
℃
1. BASE
1
2. COLLECTOR
3. EMITTER
2
3
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base
-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
CLASSIFICATION OF
Rank
Range
h
FE(1)
Q
70-140
R
100-200
S
140-280
T
200-400
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
S
t
f
V
CC
=50V,I
C
=1.5A, I
B1
=-I
B2
=-0.15A
Test
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=100V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=2A
I
C
=1.5A, I
B
=150mA
I
C
=1.5A, I
B
=150mA
V
CE
=10V, I
C
=500mA
V
CB
=10V, I
E
=0, f=1MHz
180
25
100
900
50
70
40
0.4
1.2
V
V
MHz
pF
nS
nS
nS
conditions
Min
120
100
6
1
1
400
Typ
Max
Unit
V
V
V
μA
μA
A,Feb,2011
Typical Characteristics
1.0
2SD1815
h
FE
——
I
C
V
CE
=5V
T
a
=100
℃
Static Characteristic
5.0mA
4.5mA
COMMON
EMITTER
T
a
=25
℃
DC CURRENT GAIN
h
FE
300
(A)
0.8
4.0mA
3.5mA
COLLECTOR CURRENT
I
C
200
0.6
3.0mA
2.5mA
T
a
=25
℃
0.4
2.0mA
1.5mA
100
0.2
1.0mA
I
B
=0.5mA
0.0
0
COLLECTOR-EMITTER VOLTAGE
2
4
6
V
CE
(V)
8
10
0
0.1
0.3
1
3
COLLECTOR CURRENT
I
C
(A)
1200
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
1000
V
CEsat
——
I
C
β=10
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
1000
300
800
T
a
=25
℃
600
100
T
a
=100
℃
400
T
a
=100
℃
30
T
a
=25
℃
β=10
200
1E-3
0.01
0.1
1
3
10
1E-3
0.01
0.1
1
3
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
1000
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0/I
C
=0
1.2
P
C
——
T
a
(pF)
C
ib
300
T
a
=25
℃
COLLECTOR POWER DISSIPATION
P
C
(W)
10
1.0
C
0.8
CAPACITANCE
100
0.6
C
ob
0.4
30
0.2
10
0.1
0.3
0.0
1
3
0
25
50
75
100
125
150
REVERSE BIAS VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Feb,2011