JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
2SD1802
TRANSISTOR (NPN)
TO-252
FEATURES
Adoption of FBET,MBIT
Processes
Large
Current Capacity
and
Wide
ASO
Low
Collector-to-Emitter Saturation Voltage
Fast
Switching Speed
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
6
3
1
150
-55-150
Unit
V
V
V
A
W
℃
℃
1.BASE
2.COLLECTOR
3.EMITTER
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
CE
=2V, I
C
=3A
I
C
=2A, I
B
=100mA
I
C
=2A, I
B
=100mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
150
25
35
0.5
1.2
V
V
MHz
pF
Test
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=2V, I
C
=100mA
100
conditions
Min
60
50
6
1
1
560
Typ
Max
Unit
V
V
V
µA
µA
CLASSIFICATION OF
Rank
Range
h
FE(1)
R
100-200
S
140-280
T
200-400
U
280-560
A,Jun,2011
Typical Characteristics
500
2SD1802
h
FE
——
I
C
COMMON EMITTER
V
CE
=2V
Static Characteristic
3.0mA
COMMON
EMITTER
T
a
=25
℃
h
FE
1000
(mA)
2.7mA
400
2.4mA
2.1mA
300
I
C
T
a
=100
℃
T
a
=25
℃
COLLECTOR CURRENT
1.8mA
1.5mA
200
DC CURRENT GAIN
I
B
=0.3mA
12
100
1.2mA
0.9mA
100
0.6mA
0
0
2
4
6
8
10
10
1
10
100
1000
3000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
CEsat
——
I
C
β=20
1200
V
BEsat
——
I
C
β=20
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
900
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
100
600
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
10
10
100
1000
3000
300
10
100
1000
3000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
3000
1000
I
C
——
V
BE
1000
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
T
a
=25
℃
(mA)
COLLECTOR CURRENT
100
T =2
5
℃
a
CAPACITANCE
T =1
00
℃
a
C
(pF)
I
C
C
ib
100
C
ob
10
COMMON
EMITTER
V
CE
=2V
1
0
300
600
900
1200
10
0.1
1
10
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
1.2
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(W)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Jun,2011
FPGA/CPLD
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