LITE-ON
SEMICONDUCTOR
MBR1530CT thru 1560CT
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 15
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
B
C
K
PIN
1
2
3
TO-220AB
L
M
D
A
E
TO-220AB
MAX.
MIN.
DIM.
14.22
15.88
A
9.65
10.67
B
C
2.54
3.43
D
5.84
6.86
9.28
8.26
E
F
G
H
-
12.70
6.35
14.73
F
G
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
I
J
N
H H
PIN 1
PIN 3
PIN 2
CASE
2.29
2.79
1.14
0.51
I
J
0.30
0.64
K
3.53
4.09
3.56
4.83
L
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR
1530CT
30
21
30
MBR
1535CT
35
24.5
35
MBR
1540CT
40
28
40
15
150
10000
0.57
0.84
0.72
0.1
15
400
3.0
-55 to +150
-55 to +175
0.65
0.90
0.80
1.0
50
MBR
1545CT
45
31.5
45
MBR
1550CT
50
35
50
MBR
1560CT
60
42
60
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward RectifiedCurrent
at T
C
=125 C (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage, (Note 1)
SYMBOL
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
dv/dt
V
F
A
V/us
V
@I
F
=7.5A T
J
=125 C
@I
F
=15A T
J
=25 C
@I
F
=15A T
J
=125 C
@T
J
=25 C
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance,
per element (Note 2)
I
R
C
J
R
0JC
mA
pF
C/W
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
T
J
T
STG
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
C
C
REV. 3, 13-Sep-2001, KTHC02
RATING AND CHARACTERISTIC CURVES
MBR1530CT thru MBR1560CT
AVERAGE FORWARD CURRENT
AMPERES
15
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
2
5
10
20
50
100
10
5
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
10
T
J
= 125 C
10
MBR1530CT ~ MBR1545CT
1.0
MBR1550CT ~ MBR1560CT
0.1
T
J
= 75 C
1.0
0.01
T
J
= 25 C
0.001
0
20
40
60
80
100
120
140
0.1
0.1
0.2
0.3
0.4
0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
T
J
= 25 C
PULSE WIDTH 300us
2% Duty cycle
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACITANCE , (pF)
1000
T
J
= 25 C, f= 1MHz
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
REV. 3, 13-Sep-2001, KTHC02
详细参数
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