BZM55C2V4 - BZM55C75
500mW SURFACE MOUNT ZENER DIODE
POWER SEMICONDUCTOR
Features
•
•
•
•
500mW Power Dissipation
High Stability
Low Noise
Hemetic Package
D
B
Mechanical Data
•
•
•
•
•
Case: MicroMELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.012 grams (approx.)
A
MicroMELF
Dim
A
B
C
Min
1.8
1.20
Max
2.0
1.25
1.35∅ Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Power Dissipation
Zener Current
Thermal Resistance, Junction to Ambient Air
Forward Voltage
(Note 1)
(Note 1)
(Note 1)
P
d
I
Z
R
θJA
V
F
@ T
A
= 25°C unless otherwise specified
Value
500
P
d
/V
Z
300
1.5
-65 to +175
Unit
mW
mA
K/W
V
°C
Symbol
@ I
F
= 200mA
Operating and Storage Temperature Range
T
j,
T
STG
Notes:
1. Valid provided that electrodes are kept at ambient temperature at a distance of 8.0mm from case.
2. Tested with pulses, T
p
= 100ms.
DS30005 Rev. C-2
1 of 3
C
BZM55C2V4-BZM55C75
Electrical Characteristics
Nominal Zener
Voltage
Type
Number
(V)
BZM55C2V4
BZM55C2V7
BZM55C3V0
BZM55C3V3
BZM55C3V6
BZM55C3V9
BZM55C4V3
BZM55C4V7
BZM55C5V1
BZM55C5V6
BZM55C6V2
BZM55C6V8
BZM55C7V5
BZM55C8V2
BZM55C9V1
BZM55C10
BZM55C11
BZM55C12
BZM55C13
BZM55C15
BZM55C16
BZM55C18
BZM55C20
BZM55C22
BZM55C24
BZM55C27
BZM55C30
BZM55C33
BZM55C36
BZM55C39
BZM55C43
BZM55C47
BZM55C51
BZM55C56
BZM55C62
BZM55C68
BZM55C75
Notes:
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
V
Z
@ I
ZT
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
@ T
A
= 25°C unless otherwise specified
Zener Voltage
Range
(Note 2)
V
Z
@ I
ZT
(V)
2.28 to 2.56
2.5 to 2.9
2.8 to 3.2
3.1 to 3.5
3.4 to 3.8
3.7 to 4.1
4.0 to 4.6
4.4 to 5.0
4.8 to 5.4
5.2 to 6.0
5.8 to 6.6
6.4 to 7.2
7.0 to 7.9
7.7 to 8.7
8.5 to 9.6
9.4 to 10.6
10.4 to 11.6
11.4 to 12.7
12.4 to 14.1
13.8 to 15.6
15.3 to 17.1
16.8 to 19.1
18.8 to 21.2
20.8 to 23.3
22.8 to 25.6
25.1 to 28.9
28 to 32
31 to 35
34 to 38
37 to 41
40 to 46
44 to 50
48 to 54
52 to 60
58 to 66
64 to 72
70 to 79
Zener Impedance
Z
ZT
@ I
ZT
(Ω)
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 8.0
< 7.0
< 7.0
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
Z
ZT
@ I
ZK
(Ω)
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Leakage Current @ V
R
I
R
@
T
A
=25°C
(mA)
< 50
< 10
< 4.0
< 2.0
< 2.0
< 2.0
< 1.0
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
I
R
@
T
A
=150°C
(mA)
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 2.0
< 5.0
< 5.0
< 5.0
< 10
< 10
< 10
< 10
< 10
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
Temperature
Coefficient
(%/K)
-0.09 to -0.06
-0.09 to -0.06
-0.08 to -0.05
-0.08 to -0.05
-0.08 to -0.05
-0.08 to -0.05
-0.06 to - 0.03
-0.05 to +0.02
-0.02 to + 0.02
-0.05 to +0.05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.10
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
1. Valid provided that electrodes are kept at ambient temperature at a distance of 8.0mm from case.
2. Tested with pulses, T
p
= 100ms.
DS30005 Rev. C-2
2 of 3
BZM55C2V4-BZM55C75
500
P
d
, TOTAL POWER DISSIPATION (mW)
200
V
R
= 2.0V
T
j
= 25
°
C
C
j
, DIODE CAPACITANCE (pF)
400
150
300
100
200
50
100
0
0
40
80
120
160
200
0
0
5
10
15
20
25
T
A
, AMBIENT TEMPERATURE
Fig.1 Power Dissipation vs Ambient Temperature
V
Z
, ZENER VOLTAGE (V)
Fig. 2 Diode Capacitance vs Zener Voltage
1000
DIFFERENTIAL ZENER RESISTANCE (
Ω
)
T
j
= 25
°
C
I
Z
= 1.0mA
100
5.0mA
10
10mA
1
0
5
10
15
20
25
V
Z
, ZENER VOLTAGE (V)
Fig. 3 Differential Zener Impedance
1000
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE (K/W)
100
R
θ
JA
(t) = r(t)
*
R
θ
JA
R
θJA
= 300 K/W
P
(pk)
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
t
1
t
2
T
J
- T
A
= P
PK
*
R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
1.0
0.1
1.0
10
100
1000
t
1
, SQUARE WAVE PULSE DURATION (seconds)
Fig. 4 Typical Normalized Transient Thermal Impedance Curves
DS30005 Rev. C-2
3 of 3
BZM55C2V4-BZM55C75
Microchip MCU
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