BAV200 / 201 / 202 / 203
Switching Diode
Features
Silicon Epitaxial Planar Diodes
Applications
General purposes
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80)
Weight: approx. 34 mg
Cathode Band Color: Black
Absolute Maximum Ratings
Parameter
Peak reverse voltage
Test Condition
( T
amb
=25
o
C unless otherwise specified )
Part
BAV200
BAV201
BAV202
BAV203
Symbol
V
RRM
V
RRM
V
RRM
V
RRM
V
R
V
R
V
R
V
R
I
F
I
FSM
I
FM
Value
60
120
200
250
50
100
150
200
250
1
625
Unit
V
V
V
V
V
V
V
V
mA
A
mA
Reverse voltage
BAV200
BAV201
BAV202
BAV203
Forward current
Peak forward surge current
Forward peak current
t
p
= 1 s, T
j
=25 C
f=50Hz
o
Thermal Characteristics
Parameter
Junction ambient
Junction temperature
Stroage temperature range
Test Condition
on PC board
50 mm X 50mm X 1.6mm
( T
amb
=25
o
C unless otherwise specified )
Symbol
R
thJA
T
j
T
stg
Value
500
175
-65 to +175
Unit
K/W
o
o
C
C
Electrical Characteristics
Parameter
Forward voltage
Reverse current
V
R
=50V
V
R
=100V
V
R
=150V
V
R
=200V
T
j
=100 C, V
R
=50V
T
j
=100
o
C, V
R
=100V
T
j
=100 C, V
R
=150V
T
j
=100
o
C, V
R
=200V
Breakdown voltage
I
R
=100
uA
, t
p
/T=0.01, t
p
=0.3
ms
I
R
=100
uA
, t
p
/T=0.01, t
p
=0.3
ms
I
R
=100
uA
, t
p
/T=0.01, t
p
=0.3
ms
I
R
=100
uA
, t
p
/T=0.01, t
p
=0.3
ms
Diode capacitance
Differential forward resistance
Reverse recovery time
V
R
=0, f=1MHz
I
F
=10
mA
I
F
=I
R
=30
m
A, i
R
=3
m
A, R
L
=100
Ω
o
o
( T
amb
=25
o
C unless otherwise specified )
Test Condition
Part
BAV200
BAV201
BAV202
BAV203
BAV200
BAV201
BAV202
BAV203
BAV200
BAV201
BAV202
BAV203
Symbol
V
F
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
V
(BR)
C
D
r
f
t
rr
60
120
200
250
1.5
5
50
Min.
Typ.
Max.
1
100
100
100
100
15
15
15
15
Unit
V
nA
nA
nA
nA
uA
uA
uA
uA
V
V
V
V
pF
Ω
ns
I
F
=100
mA
652
嵌入式系统
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