BAV19 thru BAV21
Small-Signal Diode
Fast Switching Diodes
Features
Silicon Epitaxial Planar Diode
For general purpose
This diode is also available in other case styles including: the
MiniMELF case with the type designation BAV101 to BAV103.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(T
A
=25
o
C unless otherwise noted.)
Parameter
Continuous reverse voltage
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
(1)
Symbol
Limit
100
150
200
120
200
250
250
200
625
1.0
500
430
175
-65 to +175
Unit
V
R
Volts
Repetitive peak reverse voltage
V
RRM
I
F
I
F(AV)
I
FRM
I
FSM
P
tot
R
θ
JA
T
j
Volts
mA
mA
mA
Amp
mW
o
Forward DC current at T
amb
=25
o
C
Rectified current (Average)
half wave rectification with resist. load
at T
amb
=25
o
C
(1)
Repetitive peak forward current
at f>50Hz,
Θ
=180
O
, T
amb
=25
o
C
(1)
Surge forward current at t<1s and T
j
=25
o
C
Power dissipation at T
amb
=25
o
C
(1)
Thermal resistance junction to ambient air
(1)
Junction temperature
(1)
C/W
o
C
C
Storage temperature range
Notes:
(1)
T
S
o
1. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
632
Electrical Characteristics
(T
J
=25
o
C unless otherwise noted.)
Parameter
Forward voltage
BAV19
BAV19
BAV20
BAV20
BAV21
BAV21
Symbol
V
F
Test Condition
I
F
=100mA
I
F
=200mA
V
R
=100V
V
R
=100V, T
j
=100
O
C
V
R
=150V
V
R
=150V, T
j
=100
O
C
V
R
=200V
V
R
=200V, T
j
=100
O
C
I
F
=10mA
V
R
=0V, f=1MHz
I
F
=30mA, I
R
=30mA
I
rr
=3mA, R
L
=100
Ω
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
5
1.5
-
Max.
1.00
1.25
100
15
100
15
100
15
-
-
50
Unit
Volts
nA
uA
nA
uA
nA
uA
Ω
pF
ns
Leakage current
I
R
Dynamic forward resistance
Capacitance
Reverse recovery time
γf
C
tot
t
rr
RATINGS AND CHARACTERISTIC CURVES
(T
A
= 25
o
C unless otherwise noted.)
633
详细参数
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