苏州固锝电子股½有限公司
SUZHOU GOOD-ARK ELECTRONIC CO., LTD
PRESS FIT AUTOMOTIVE RECTIFIER
制造厂家:苏州固锝电子股½有限公司
½成年月日：
½成部门：½½电子事业部
批准人
：
一：客户承认签½的内容
请确认并签½记½如下内容
我公司的全称：
我司选择的包装½式是：GD 包装
□
我司接受的印字½式是：“GD”印字½式
□
中性包装
□
我司指定的印字½式（以定单要求为准）
□
其他特殊要求（页面不足时可另附说明资料一同签回）
：
NO.
1
2
3
4
5
6
7
8
9
10
GD Type
Customer Type
Confirmation
Date
Remark
二：苏州固锝电子股½有限公司将严格按照如下规格要求提供产品。
本规格承认书的记½½内容如下：
2.1 DATA SHEET（见附件）
。
2.2电性测试报告（在样品盒内随同样品发出）
。
2.3印字规格
MARKING
无
2.4包装规格/PACKAGING SPECIFICATION
盒装/BP
产品
GPP
DISH
产品数
量K/箱
5.28
产品数
量K/盒
0.33
包装箱尺寸（mm）
长度
380
½度
295
高度
350
包装箱
单重kg
0.74
内 盒
数/箱
16
满箱包装
毛重kg
8.26
满箱包装
净重kg
5.92
满箱包装
皮重kg
2.34
苏州固锝电子股½有限公司
SUZHOU GOOD-ARK ELECTRONIC CO., LTD
PRESS FIT AUTOMOTIVE RECTIFIER
包装分中性和“GD”包装½式二种供选择，或根据客户特殊要求包装。目前固锝公司的中
性内包装和“GD”标记的内包装的照片如下（外包装½式同）
：
中性包装内部照片
中性包装外部照片
GD包装内部照片
GD包装外部照片
中性外包装箱照片
GD外包装箱照片
苏州固锝电子股½有限公司
SUZHOU GOOD-ARK ELECTRONIC CO., LTD
PRESS FIT AUTOMOTIVE RECTIFIER
三：变更履历记½表
变更履历
（CHANGE
RECORD）
NO.
变更内容
(Change Item)
变更原因
The reson of Change
确认人
Confirmation
日期
Date
四、DATA
SHEET
苏州固锝电子股½有限公司
SUZHOU GOOD-ARK ELECTRONIC CO., LTD
PRESS FIT AUTOMOTIVE RECTIFIER
Technical Specification:
Features:
Low leakage
Low forward voltage drop
High current capability
High forward surge current capability
Mechanical Data:
Technology : Vacuum soldered
Case :Copper case
Glass passivated chip
Polarity: As marked of case bottom
Lead: Plated lead, solderable per MIL-STD-202E
method 208
℃
Mounting: Press Fit
Weight: 0.039 ounces 1.12 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
4.1 25A STD
SYMBOLS
GDR(S)251 GDR(S)252 GDR(S)253 GDR(S)254 GDR(S)256
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum
Current,
At T
C
= 105
O
C
Peak Forward Surge Current
8.3mS single half sine wave superimposed
on
rated load (JEDEC method)
Rating for fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage
Drop at 100A
Maximum DC Reverse Current at Rated
T
A
= 25
O
C
DC
T
C
= 150
O
C
Typical Thermal Resistance
Operating and Storage Temperature Rang
Blocking
Voltage
Average
Forward
Rectified
UNIT
V
RRM
V
RMS
V
DC
I
(AV)
100
70
100
200
140
200
300
210
300
25
400
280
400
600
420
600
Volts
Volts
Volts
Amps
I
FSM
300
Amps
I
2
t
V
F
373
1.10
5.0
A
2
S
Volts
I
R
250
R
θJL
T
J,
T
STG
0.8
(-40to +175)
O
µA
C/W
O
C
苏州固锝电子股½有限公司
SUZHOU GOOD-ARK ELECTRONIC CO., LTD
PRESS FIT AUTOMOTIVE RECTIFIER
4.2
35A STD
SYMBOLS
GDR(S)351 GDR(S)352 GDR(S)353 GDR(S)354 GDR(S)356
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum
Current,
At T
C
= 105
O
C
Peak Forward Surge Current
8.3mS single half sine wave superimposed
on
rated load (JEDEC method)
Rating for fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage
Drop at 100A
Maximum DC Reverse Current at Rated
T
A
= 25
O
C
DC
T
C
= 150
O
C
Typical Thermal Resistance
Operating and Storage Temperature Rang
Blocking
Voltage
Average
Forward
Rectified
UNIT
V
RRM
V
RMS
V
DC
I
(AV)
100
70
100
200
140
200
300
210
300
35
400
280
400
600
420
600
Volts
Volts
Volts
Amps
I
FSM
400
Amps
I
2
t
V
F
664
1.09
5.0
A
2
S
Volts
I
R
250
R
θJL
T
J,
T
STG
0.8
(-40 to +175)
O
µA
C/W
O
C
4.3
50A STD
SYMBOLS
GDR(S)501 GDR(S)502 GDR(S)503 GDR(S)504 GDR(S)506
UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
At T
C
= 105
O
C
Peak Forward Surge Current
8.3mS single half sine wave superimposed on
rated load (JEDEC method)
Rating for fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage Drop
at 100A
Maximum DC Reverse Current at Rated
= 25
O
C
DC
T
C
= 150
O
C
Typical Thermal Resistance
Operating and Storage Temperature Rang
Blocking
Voltage
T
A
V
RRM
V
RMS
V
DC
I
(AV)
100
70
100
200
140
200
300
210
300
50
400
280
400
600
420
600
Volts
Volts
Volts
Amps
I
FSM
I
2
t
V
F
500
1037
1.07
5.0
Amps
A
2
S
Volts
I
R
250
R
θJL
T
J,
T
STG
0.8
(-40 to +175)
O
µA
C/W
O
C
NOTES:
1.Enough heatsink must be considered in application.
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