SPN1423
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1423 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
20V/2.8A,R
DS(ON)
= 90mΩ@V
GS
=4.5V
20V/2.2A,R
DS(ON)
= 100mΩ@V
GS
=2.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-323 ( SC–70 ) package design
PIN CONFIGURATION ( SOT-323 ; SC-70 )
PART MARKING
2012/06/20
Ver.2
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SPN1423
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPN1423S32RG
SPN1423S32RGB
Package
SOT-323
SOT-323
Part Marking
23YW
23YW
※
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※
SPN1423S32RG : Tape Reel ; Pb – Free
※
SPN1423S32RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
20
±12
2.8
2.2
10
1.6
1.25
0.8
150
-55/150
100
Unit
V
V
A
A
A
W
℃
℃
℃/W
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SPN1423
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±12V
V
DS
=20V,V
GS
=0V
V
DS
=20V,V
GS
=0V
T
J
=55℃
V
DS
≧5V,V
GS
=4.5V
V
DS
≧5V,V
GS
=2.5V
V
GS
=4.5V,I
D
=2.8A
V
GS
=2.5V,I
D
=2.2A
V
DS
=5V,I
D
=2.8A
I
S
=1.6A,V
GS
=0V
20
0.45
1.2
±100
1
10
5
4
0.055
0.075
10
0.85
0.090
0.100
1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10V,R
L
=5.5Ω
I
D
≡2.8A,V
GEN
=4.5V
R
G
=6Ω
V
DS
=10V,V
GS
=0V
f=1MHz
V
DS
=10V,V
GS
=4.5V
I
D
≡2.8A
5.4
0.65
1.4
340
115
33
12
36
34
10
10
nC
pF
25
60
60
25
ns
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Ver.2
Page 3
SPN1423
N-Channel Enhancement Mode MOSFET
SOT-323 PACKAGE OUTLINE
2012/06/20
Ver.2
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SPN1423
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
©The SYNC Power logo is a registered trademark of SYNC Power Corporation
©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2012/06/20
Ver.2
Page 5
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