M2U51264TU88A2B/ M2Y51264TU88A2B (Green)
M2U1G64TU8HA2B / M2Y1G64TU8HA2B (Green)
M2U51264TU88A0B/ M2Y51264TU88A0B (Green)
M2U1G64TU8HA0B / M2Y1G64TU8HA0B (Green)
M2U51264TU88A0F/ M2U51264TU88A2F
1GB: 128M x 64 / 512MB: 64M x 64
Unbuffered DDR2 SDRAM DIMM
240pin Unbuffered DDR2 SDRAM MODULE
Based on 64Mx8 DDR2 SDRAM
Features
• JEDEC Standard 240-pin Dual In-Line Memory Module
• 64Mx64 and 128Mx64 DDR2 Unbuffered DIMM based on
64Mx8 DDR2 SDRAM
• Performance:
PC2-3200 PC2-4200 PC2-5300
Speed Sort
DIMM
Latency
*
5A
3
200
5
400
37B
4
266
3.7
533
3C
5
333
3
667
Unit
MHz
ns
MHz
• Programmable Operation:
- Device
Latency: 3, 4, 5
- Burst Type: Sequential or Interleave
- Burst Length: 4, 8
- Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
f
CK
Clock Frequency
t
CK
Clock Cycle
f
DQ
DQ Burst Frequency
•
14/10/1 Addressing (row/column/rank) –
M2Y51264TU88A2B, M2Y51264TU88A0B
M2U51264TU88A2B, M2U51264TU88A0B
M2U51264TU88A2F, M2U51264TU88A0F
• 14/10/2 Addressing (row/column/rank) –
M2Y1G64TU8HA2B, M2Y1G64TU8HA0B
M2U1G64TU8HA2B, M2U1G64TU8HA0B
• 7.8 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 60-ball FBGA Package
• RoHs compliance –
M2Y1G64TU8HA2B, M2Y1G64TU8HA0B
M2Y51264TU88A2B, M2Y51264TU88A0B
• Intended for 200 MHz, 266MHz, and 333MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
DD
= V
DDQ
= 1.8Volt ± 0.1
• SDRAM have 4 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• Bi-directional data strobe with one clock cycle preamble and
one-half clock post-amble
• Address and control signals are fully synchronous to positive
clock edge
Description
M2Y51264TU88A2B, M2Y51264TU88A0B, M2Y1G64TU8HA2B, M2Y1G64TU8HA0B, M2U51264TU88A2B, M2U51264TU88A0B,
M2U51264TU88A0F, M2U51264TU88A2F, M2U1G64TU8HA0B and M2U1G64TU8HA2B are 240-Pin Double Data Rate 2 (DDR2)
Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM), organized as a one-rank 64Mx64 and two ranks 128Mx64
high-speed
memory
array.
Modules
use
eight
64Mx8
(M2Y51264TU88A2B,
M2Y51264TU88A0B,
M2U51264TU88A2B,
M2U51264TU88A0F, M2U51264TU88A2F and M2U51264TU88A0B) and sixteen 64Mx8 (M2Y1G64TU8HA2B, M2Y1G64TU8HA0B,
M2U1G64TU88A2B and M2U1G64TU88A0B) DDR2 SDRAMs in FBGA packages. These DIMMs are manufactured using raw cards
developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between
suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating up to 200MHz (266MHz and 333MHz) clock speeds and achieves high-speed
data transfer rates of up to 400MHz (533MHz and 667MHz). Prior to any access operation, the device
latency and burst / length /
operation type must be programmed into the DIMM by address inputs A0-A13 and I/O inputs BA0 and BA1 using the mode register set
cycle.
The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of
serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.0
08/2006
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
M2U51264TU88A2B/ M2Y51264TU88A2B (Green)
M2U1G64TU8HA2B / M2Y1G64TU8HA2B (Green)
M2U51264TU88A0B/ M2Y51264TU88A0B (Green)
M2U1G64TU8HA0B / M2Y1G64TU8HA0B (Green)
M2U51264TU88A0F/ M2U51264TU88A2F
1GB: 128M x 64 / 512MB: 64M x 64
Unbuffered DDR2 SDRAM DIMM
Ordering Information
Part Number
M2Y1G64TU8HA2B-5A
M2Y1G64TU8HA0B-5A
M2U1G64TU8HA2B-5A
M2U1G64TU8HA0B-5A
M2Y51264TU88A2B-5A
M2Y51264TU88A0B-5A
M2U51264TU88A2B-5A
M2U51264TU88A0B-5A
M2U51264TU88A0F-5A
M2U51264TU88A2F-5A
M2Y1G64TU8HA2B-37B
M2Y1G64TU8HA0B-37B
M2U1G64TU8HA2B-37B
M2U1G64TU8HA0B-37B
M2Y51264TU88A2B-37B
M2Y51264TU88A0B-37B
M2U51264TU88A2B-37B
M2U51264TU88A0B-37B
M2U51264TU88A0F-37B
M2U51264TU88A2F-37B
M2Y1G64TU8HA2B-3C
M2Y1G64TU8HA0B-3C
M2U1G64TU8HA2B-3C
M2U1G64TU8HA0B-3C
M2Y51264TU88A2B-3C
M2Y51264TU88A0B-3C
M2U51264TU88A2B-3C
M2U51264TU88A0B-3C
M2U51264TU88A0F-3C
M2U51264TU88A2F-3C
333MHz (3ns @ CL = 5)
DDR2-667
PC2-5300
64Mx64
Green
128Mx64
Green
266MHz (3.7ns @ CL = 4)
DDR2-533
PC2-4200
64Mx64
Gold
1.8V
Green
128Mx64
Green
200MHz (5ns @ CL = 3)
DDR2-400
PC2-3200
64Mx64
Green
128Mx64
Speed
Organization
Leads
Power
Note
Green
REV 1.0
08/2006
2
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
M2U51264TU88A2B/ M2Y51264TU88A2B (Green)
M2U1G64TU8HA2B / M2Y1G64TU8HA2B (Green)
M2U51264TU88A0B/ M2Y51264TU88A0B (Green)
M2U1G64TU8HA0B / M2Y1G64TU8HA0B (Green)
M2U51264TU88A0F/ M2U51264TU88A2F
1GB: 128M x 64 / 512MB: 64M x 64
Unbuffered DDR2 SDRAM DIMM
Pin Description
CK0,
CKE0, CKE1
Differential Clock Inputs
Clock Enable
Row Address Strobe
Column Address Strobe
Write Enable
,
A0-A9, A11-A13
A10/AP
BA0, BA1
ODT0, ODT1
NC
Chip Selects
Address Inputs
Column Address Input/Auto-precharge
SDRAM Bank Address Inputs
Reset pin
Active termination control lines
No Connect
DQ0-DQ63
DQS0-DQS8
-
V
DD
V
REF
V
DDSPD
V
SS
SCL
SDA
SA0-2
Data input/output
Bidirectional data strobes
Differential data strobes
Power (1.8V)
Ref. Voltage for SSTL_18 inputs
Serial EEPROM positive power supply
Ground
Serial Presence Detect Clock Input
Serial Presence Detect Data input/output
Serial Presence Detect Address Inputs
DM0-DM8/DQS9-17 Input Data Mask/High Data Strobes
REV 1.0
08/2006
3
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
M2U51264TU88A2B/ M2Y51264TU88A2B (Green)
M2U1G64TU8HA2B / M2Y1G64TU8HA2B (Green)
M2U51264TU88A0B/ M2Y51264TU88A0B (Green)
M2U1G64TU8HA0B / M2Y1G64TU8HA0B (Green)
M2U51264TU88A0F/ M2U51264TU88A2F
1GB: 128M x 64 / 512MB: 64M x 64
Unbuffered DDR2 SDRAM DIMM
Pinout
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
DQS3
V
SS
DQ26
DQ27
V
SS
DQS2
V
SS
DQ18
DQ19
V
SS
DQ24
DQ25
V
SS
DQS1
V
SS
NC
NC
V
SS
DQ10
DQ11
V
SS
DQ16
DQ17
V
SS
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
ODT1
V
DDQ
V
SS
DQ32
DQ33
V
DDQ
DQS0
V
SS
DQ2
DQ3
V
SS
DQ8
DQ9
V
SS
Front
V
REF
V
SS
DQ0
DQ1
V
SS
Pin
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
KEY
V
SS
V
SS
V
DD
NC
V
DD
A10/AP
BA0
V
DDQ
Front
NC
NC
V
SS
NC
NC
V
SS
NC
NC
V
SS
V
DDQ
CKE0
V
DD
NC
NC
V
DDQ
A11
A7
V
DD
A5
A4
V
DDQ
A2
V
DD
Pin
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
DQS7
V
SS
DQ58
DQ59
V
SS
SDA
SCL
DQS6
V
SS
DQ50
DQ51
V
SS
DQ56
DQ57
V
SS
DQS5
V
SS
DQ42
DQ43
V
SS
DQ48
DQ49
V
SS
SA2
NC
V
SS
DQS4
V
SS
DQ34
DQ35
V
SS
DQ40
DQ41
V
SS
Front
V
SS
Pin
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
V
SS
DQ14
DQ15
V
SS
DQ20
DQ21
V
SS
DM2
NC
V
SS
DQ22
DQ23
V
SS
DQ28
DQ29
V
SS
DM3
NC
V
SS
DQ30
DQ31
V
SS
NC
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
V
DDQ
ODT0
A13
V
DD
V
SS
DQ36
DQ37
V
SS
V
DD
A0
V
DD
BA1
V
DDQ
V
SS
CK1
V
SS
DQ6
DQ7
V
SS
DQ12
DQ13
V
SS
DM1, DQS10
Back
V
SS
DQ4
DQ5
V
SS
DM0, DQS9
Pin
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
KEY
CK0
Back
NC
V
SS
NC
NC
V
SS
NC
NC
V
SS
V
DDQ
CKE1
V
DD
NC
NC
V
DDQ
A12
A9
V
DD
A8
A6
V
DDQ
A3
A1
V
DD
Pin
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
V
SS
DM6
NC
V
SS
DQ54
DQ55
V
SS
DQ60
DQ61
V
SS
DM7
NC
V
SS
DQ62
DQ63
V
SS
V
DDSPD
SA0
SA1
Back
DM4
NC
V
SS
DQ38
DQ39
V
SS
DQ44
DQ45
V
SS
DM5
NC
V
SS
DQ46
DQ47
V
SS
DQ52
DQ53
V
SS
CK2
REV 1.0
08/2006
4
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
M2U51264TU88A2B/ M2Y51264TU88A2B (Green)
M2U1G64TU8HA2B / M2Y1G64TU8HA2B (Green)
M2U51264TU88A0B/ M2Y51264TU88A0B (Green)
M2U1G64TU8HA0B / M2Y1G64TU8HA0B (Green)
M2U51264TU88A0F/ M2U51264TU88A2F
1GB: 128M x 64 / 512MB: 64M x 64
Unbuffered DDR2 SDRAM DIMM
Input/Output Functional Description
Symbol
CK0, CK1, CK2
,
,
Type
(SSTL)
(SSTL)
(SSTL)
Polarity
Function
The positive differential clock inputs which drives the input to the on-DIMM PLL. All the
Positive
DDR2 SDRAM address and control inputs are sampled on the rising edge of their
Edge
associated clocks.
Negative
The negative edge of system clock inputs which drives the input to the on-DIMM PLL.
Edge
Active
High
Active
Low
Active
Low
Activates the SDRAM CK signal when high and deactivates the CK signal when low. By
deactivating the clocks, CKE low initiates the Power Down mode, or the Self Refresh
mode.
Enables the associated SDRAM command decoder when low and disables the
command decoder when high. When the command decoder is disabled, new commands
are ignored but previous operations continue.
When sampled at the positive rising edge of the clock,
command to be executed.
Reference voltage for SSTL-18 inputs
Isolated power supply for the DDR SDRAM output buffers to provide improved noise
immunity
Active
High
-
On-Die Termination control signals
Selects which SDRAM bank is to be active.
During a Bank Activate command cycle, A0-A13 defines the row address (RA0-RA13)
when sampled at the rising clock edge.
During a Read or Write command cycle, A0-A9, A11 defines the column address
(CA0-CA10) when sampled at the rising clock edge. In addition to the column address,
AP is used to invoke Autoprecharge operation at the end of the Burst Read or Write
cycle. If AP is high, autoprecharge is selected and BA0/BA1 define the bank to be
precharged. If AP is low, autoprecharge is disabled.
During a Precharge command cycle, AP is used in conjunction with BA0/BA1 to control
which bank(s) to precharge. If AP is high all 4 banks will be precharged regardless of the
state of BA0/BA1. If AP is low, then BA0/BA1 are used to define which bank to
pre-charge.
Data and Check Bit Input/Output pins.
Power and ground for the DDR SDRAM input buffers and core logic
Negative
and
Data strobe for input and output data
Positive
Edge
Active
High
-
-
-
Supply
The data write masks, associated with one data byte. In Write mode, DM operates as a
byte mask by allowing input data to be written if it is low but blocks the write operation if
it is high. In Read mode, DM lines have no effect. DM8 is associated with check bits
CB0-CB7, and is not used on x64 modules.
Address inputs. Connected to either V
DD
or V
SS
on the system board to configure the
Serial Presence Detect EEPROM address.
This bi-directional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to V
DD
to act as a pull-up.
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be
connected from the SCL bus time to V
DD
to act as a pull-up.
Serial EEPROM positive power supply.
CKE0, CKE1
,
(SSTL)
,
V
REF
V
DDQ
,
(SSTL)
Supply
Supply
Input
(SSTL)
,
,
define the
ODT0, ODT1
BA0, BA1
A0 – A9
A10/AP
A11 – A13
(SSTL)
-
DQ0 – DQ63
V
DD,
V
SS
DQS0 – DQS8
–
(SSTL)
Supply
(SSTL)
Active
High
DM0 – DM8
Input
SA0 – SA2
SDA
SCL
V
DDSPD
REV 1.0
08/2006
5
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
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