Page Mode DRAM, 16KX1, 300ns, NMOS, CQCC18, LCC-18
参数名称 | 属性值 |
厂商名称 | AMD(超微) |
零件包装代码 | LCC |
包装说明 | QCCN, |
针数 | 18 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | PAGE |
最长访问时间 | 300 ns |
其他特性 | RAS ONLY REFRESH |
JESD-30 代码 | R-CQCC-N18 |
长度 | 9.015 mm |
内存密度 | 16384 bit |
内存集成电路类型 | PAGE MODE DRAM |
内存宽度 | 1 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 18 |
字数 | 16384 words |
字数代码 | 16000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -55 °C |
组织 | 16KX1 |
输出特性 | 3-STATE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | QCCN |
封装形状 | RECTANGULAR |
封装形式 | CHIP CARRIER |
认证状态 | Not Qualified |
刷新周期 | 128 |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | NMOS |
温度等级 | OTHER |
端子形式 | NO LEAD |
端子节距 | 1.27 mm |
端子位置 | QUAD |
宽度 | 7.305 mm |
AM9016CZL | AM9016DZL | AM9016EDL | AM9016DDL | AM9016CDL | AM9016EZL | |
---|---|---|---|---|---|---|
描述 | Page Mode DRAM, 16KX1, 300ns, NMOS, CQCC18, LCC-18 | Page Mode DRAM, 16KX1, 250ns, NMOS, CQCC18, LCC-18 | Page Mode DRAM, 16KX1, 200ns, NMOS, CDIP16, 0.300 INCH, HERMETIC SEALED, CERDIP-16 | Page Mode DRAM, 16KX1, 250ns, NMOS, CDIP16, 0.300 INCH, HERMETIC SEALED, CERDIP-16 | Page Mode DRAM, 16KX1, 300ns, NMOS, CDIP16, 0.300 INCH, HERMETIC SEALED, CERDIP-16 | Page Mode DRAM, 16KX1, 200ns, NMOS, CQCC18, LCC-18 |
厂商名称 | AMD(超微) | AMD(超微) | AMD(超微) | AMD(超微) | AMD(超微) | AMD(超微) |
零件包装代码 | LCC | LCC | DIP | DIP | DIP | LCC |
包装说明 | QCCN, | QCCN, | DIP, DIP16,.3 | DIP, DIP16,.3 | DIP, DIP16,.3 | QCCN, |
针数 | 18 | 18 | 16 | 16 | 16 | 18 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE |
最长访问时间 | 300 ns | 250 ns | 200 ns | 250 ns | 300 ns | 200 ns |
其他特性 | RAS ONLY REFRESH | RAS ONLY REFRESH | RAS ONLY REFRESH | RAS ONLY REFRESH | RAS ONLY REFRESH | RAS ONLY REFRESH |
JESD-30 代码 | R-CQCC-N18 | R-CQCC-N18 | R-CDIP-T16 | R-CDIP-T16 | R-CDIP-T16 | R-CQCC-N18 |
长度 | 9.015 mm | 9.015 mm | 19.43 mm | 19.43 mm | 19.43 mm | 9.015 mm |
内存密度 | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bi |
内存集成电路类型 | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM |
内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 18 | 18 | 16 | 16 | 16 | 18 |
字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | QCCN | QCCN | DIP | DIP | DIP | QCCN |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 128 | 128 | 128 | 128 | 128 | 128 |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | NO | NO | NO | YES |
技术 | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS |
温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
端子形式 | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD |
端子节距 | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm |
端子位置 | QUAD | QUAD | DUAL | DUAL | DUAL | QUAD |
宽度 | 7.305 mm | 7.305 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.305 mm |
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