CMT04N60
POWER MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to
withstand high energy in the avalanche mode and switch
efficiently. This new high energy device also offers a
drain-to-source diode with fast recovery time. Designed for
high voltage, high speed switching applications such as
power supplies, converters, power motor controls and
bridge circuits.
FEATURES
!
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!
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Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Top View
G ATE
SOU RCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 4A, L = 10mH, R
G
= 25Ω)
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
θ
JC
θ
JA
T
L
1.30
100
260
℃
℃/W
T
J
, T
STG
E
AS
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
96
38
-55 to 150
80
℃
mJ
Value
4.0
14
±20
±40
V
V
W
Unit
A
2003/06/25
Preliminary
Rev. 1.1
Champion Microelectronic Corporation
Page 1
CMT04N60
POWER MOSFET
ORDERING INFORMATION
Part Number
CMT04N60N220
CMT04N60N220FP
Package
TO-220
TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT04N60
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
=600 V, V
GS
= 0 V)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 2.0A) *
Forward Transconductance (V
DS
= 50 V, I
D
= 2.0 A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 300 V, I
D
= 4.0 A,
V
GS
= 10 V,
R
G
= 9.1Ω) *
(V
DS
= 480 V, I
D
= 4.0 A,
V
GS
= 10 V)*
Symbol
V
(BR)DSS
I
DSS
0.1
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
2.2
540
125
8.0
12
7.0
19
10
5.0
2.7
2.0
4.5
7.5
760
180
20
20
10
40
20
10
2.0
100
100
4.0
2.4
nA
nA
V
Ω
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
Min
600
Typ
Max
Units
V
mA
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(I
S
= 4.0 A,
d
IS
/d
t
= 100A/µs)
V
SD
t
on
t
rr
0.86
**
655
1.0
V
ns
ns
* Pulse Test: Pulse Width
≦300µs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
2003/06/25
Preliminary
Rev. 1.1
Champion Microelectronic Corporation
Page 2
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