LITE-ON
SEMICONDUCTOR
SMBJ SERIES
STAND-OFF VOLTAGE -
5.0
to
350
Volts
POWER DISSIPATION -
600
WATTS
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
FEATURES
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification 94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ns for
Uni-direction,less than 5.0ns for Bi-direction,form 0 Volts
to BV min
SMB
SMB
A
DIM.
A
B
C
MIN.
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
MAX.
4.57
3.94
2.21
0.31
5.59
0.20
2.50
1.52
B
C
D
E
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional device
none cathode band denotes bi-directional device
Weight : 0.003 ounces, 0.093 gram
G
H
E
F
D
F
G
H
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
CHARACTERISTICS
PEAK POWER DISSIPATION AT T
J
= 25
℃
,
TP = 1ms (Note 1)
Peak Forward Surge Current 8.3ms single
half sine-wave@Tj=25
℃
(Note 2)
Steady State Power Dissipation at TL =120
℃
lead
lenghts 0.375" (9.5mm) , see fig.4
Without Heatshink
Maximum Instantaneous forward voltage
at 50A for unidirectional devices only (Note 3)
Typical Thermal Resistance (Note 4)
SYMBOLS
VALUE
UNIT
P
PK
600
WATTS
I
FSM
100
AMPS.
P
M(AV)
1.5
WATTS
V
F
R
0JA
R
0JL
R
0JC
SEE NOTE 3
90
21
25
-55 to +175
-55 to +175
Volts
C/W
Operating Temperature Range
Storage Temperature Range
T
J
T
STG
C
C
REV. 10, Nov-2011, KSIB02
NOTES :1. Non-repetitive current pulse, per fig. 3 and derated above T
J
= 25
℃
per fig.1.
2. Only for unidirectional units.
3. V
F
= 3.5V on SMBJ5.0 thru SMBJ90A devices and V
F
= 5.0V on SMBJ100 thru SMBJ350A devices.
4. Thermal resistance from junction to ambient, lead and case.
RATING AND CHARACTERISTIC CURVES
SMBJ SERIES
PEAK PULSE DERATING IN % OFPEAK
POWER OR CURRENT
100
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - PULSE DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
120
100
80
60
40
20
0
1
2
5
10
20
50
100
Pulse Width 8.3ms
Single Half-Sine-Wave
75
50
25
10 X 1000 WAVEFORM
AS DEFINED BY R.E.A.
0
0
25
50
75
100
125
150
175
200
JUNCTION TEMPERATURE,
℃
NUMBER OF CYCLES AT 60Hz
FIG.3 - PULSE WAVEFORM
T
R
=10us
10000
FIG.4 - TYPICAL JUNCTION CAPACITANCE
I
P,
PEAK PULSE CURRENT , (% )
100
Peak value (I
RSM)
Half value=
2
CAPACITANCE , (pF)
I
RSM
Pulse width (T
P
) is defined
as that point where the
peak current decays to
50% of I
RSM
Uni-directional
1000
Bi-directional
50
T
J
=25 C
TP
10 x 1000 waveform as
defined by R.E.A.
100
T
J
= 25 C
10
0
0
1.0
2.0
3.0
4.0
1
10
100
1000
T , TIME ( ms )
STAND-OFF VOLTAGE, VOLTS
100
T
A
=25 C
PM
(AV)
STEADY STATE POWER DISSIPATION (W)
FIG.5 - PULSE RATING CURVE
FIG.6 - STEADY STATE POWER DERATING CURVE
2.5
P
P
, PEAK POWER ( K
W
)
2.0
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3.
1.5
1.0
1.0
5.0mm LEAD AREAS
0.5
DC Current
0.1
0.1us
1.0us
10us
100us
1.0ms
10ms
0.0
0
25
50
75
100
125
150
175
200
T
P
, PULSE WIDTH
TL,LEAD TEMPERATURE,
℃
LITE-ON
SEMICONDUCTOR
Device
Marking
code
(UNI)
SMBJ110A
SMBJ120A
SMBJ130A
SMBJ150A
SMBJ160A
SMBJ170A
SMBJ188A
SMBJ200A
SMBJ220A
SMBJ350A
SMBJ110CA
SMBJ120CA
SMBJ130CA
SMBJ150CA
SMBJ160CA
SMBJ170CA
SMBJ188CA
SMBJ200CA
SMBJ220CA
PE
PG
PK
PM
PP
PR
PT
PV
PX
QG
(BI)
EE
EG
EK
EM
EP
ER
ET
EV
EX
Working
PeakReverse
Voltage
V
RWM
(V)
110.0
120.0
130.0
150.0
160.0
170.0
188.0
200.0
220.0
350.0
Maximum
Maximum
Reverse Voltage
Breakdowm voltage
Reverse Surge
at I
RSM
VBR Volts
(Clamping
Current
Voltage)
Min. Max. @IT( mA)
V
RSM
(V)
I
RSM
(A)
122
133
144
167
178
189
209
224
246
391
135
147
159
185
197
209
231
247
272
432
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
177
193
209
243
259
275
328
324
356
567
3.4
3.1
2.9
2.5
2.3
2.2
1.83
1.9
1.7
1.1
Maximum
Reverse
Leakage at
V
RWM
IR (uA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Device
Uni-
directional
Device
Bi-
directional
NOTE :
1) Suffix 'A ' denotes 5% tolerance device,no suffix denotes 10 % tolerance device.
2) Add suffix 'C 'or ' CA ' after part number to specify Bi-directional devices.
3) For Bi-Directional devices having VR of 10 volts and under, the IR limit is double .
For Uni-directional devices VF max=3.5v at if=50 A ,0.5 sine wave of 8.3 msec .pulse width.
Legal Disclaimer Notice
SMBJ SERIES
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm
the latest product information and specifications before final design, purchase or
use.
LSC makes no warranty, representation or guarantee regarding the suitability of
its products for any particular purpose, nor does LSC assume any liability for
application assistance or customer product design. LSC does not warrant or
accept any liability with products which are purchased or used for any
unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property
rights of LSC.
LSC products are not authorized for use as critical components in life support
devices or systems without express written approval of LSC.
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