LS4150
SURFACE MOUNT FAST SWITCHING DIODE
POWER SEMICONDUCTOR
Features
•
•
•
•
•
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
Outline Similar to JEDEC 213AA
A
B
Mechanical Data
•
•
•
•
•
Case: QuadroMELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.034 grams (approx.)
Dim
A
B
C
D
QuadroMELF
Min
3.3
1.4
Max
3.7
1.6
1.7∅ Typical
0.3 Typical
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current@ t = 1.0µs
Power Dissipation
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
θJA
T
j
, T
STG
LS4150
50
35
600
300
4.0
500
300
-65 to +175
Unit
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
Characteristic
@ T
A
= 25°C unless otherwise specified
Symbol
Min
0.54
0.66
0.76
0.82
0.87
Max
0.62
0.74
0.86
0.92
1.0
100
100
2.5
4.0
Unit
Test Condition
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 100mA
I
F
= 200mA
V
R
= 50V
V
R
= 50V, T
j
= 150°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Maximum Forward Voltage
V
FM
V
Maximum Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
I
RM
C
j
t
rr
nA
µA
pF
ns
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
DS30007 Rev. A-2
1 of 2
C
D
LS4150
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
1000
10,000
100
I
R
, LEAKAGE CURRENT (nA)
1000
T
j
= 100
°
C
10
T
j
= 25
°
C
100
1.0
10
0.1
V
R
= 20V
0.01
0
1
2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
1
0
100
200
T
j
, JUNCTION TEMPERATURE (
°
C)
Fig. 2 Leakage Current vs Junction Temperature
DS30007 Rev. A-2
2 of 2
LS4150
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