THYRISTOR
Over-voltage Protection Thyristor
Description
ROHS
TO-92 Thyristor
solid state protection thyristor protect
telecommunications equipment such as modems, line cards,
fax machines, and other CPE.
P Series devices are used to enable equipment to meet
various regulatory requirements including GR 1089, ITU
K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968
(formerly known as FCC Part 68).
Features
Compared to surge suppression using other technologies, P Series devices offer absolute surge protection
regardless of the surge current available and the rate of applied voltage (dv/dt). P Series devices:
• Cannot be damaged by voltage
• Eliminate hysteresis and heat dissipation typically found with clamping devices
• Eliminate voltage overshoot caused by fast-rising transients
• Are non-degenerative
• Will not fatigue
•
Have low capacitance, making them ideal for high-speed transmission equipment
Electrical Parameters
Parameter
C
O
di/dt
I
S
I
DRM
I
H
I
PP
I
T
I
TSM
V
S
V
DRM
V
T
Revision:01-Aug-11
Definition
Off-state Capacitance –
typical capacitance measured in off state
Rate of Rise of Current –
maximum rated value of the acceptable rate of
rise in current over time
Switching Current –
maximum current required to switch to on state
Leakage Current –
maximum peak off-state current measured at V
DRM
Holding Current –
minimum current required to maintain on state
Peak Pulse Current –
maximum rated peak impulse current
On-state Current –
maximum rated continuous on-state current
Peak One-cycle Surge Current –
maximum rated one-cycle AC current
Switching Voltage –
maximum voltage prior to switching to on state
Peak Off-state Voltage –
maximum voltage that can be applied while
maintaining off state
On-state Voltage –
maximum voltage measured at rated on-state current
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THYRISTOR
Electrical Characteristics
Part
Number
P0080E_
P0300E_
P0640E_
P0720E_
P0900E_
P1100E_
P1300E_
P1500E_
P1800E_
P2300E_
P2600E_
P3100E_
P3500E_
V
DRM
Volts
6
25
58
65
75
90
120
140
170
190
220
275
320
V
S
Volts
25
40
77
88
98
130
160
180
220
260
300
350
400
V
T
Volts
4
4
4
4
4
4
4
4
4
4
4
4
4
I
DRM
Amps
5
5
5
5
5
5
5
5
5
5
5
5
5
I
S
mAmps
800
800
800
800
800
800
800
800
800
800
800
800
800
I
T
Amps
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
I
H
mAmps
50
50
150
150
150
150
150
150
150
150
150
150
150
Capacitance Values
PF(TYPICAL)
Part Number
A
P0080E_
P0300E_
P0640E_
P0720E_
P0900E_
P1100E_
P1300E_
P1500E_
P1800E_
P2300E_
P2600E_
P3100E_
P3500E_
50
70
50
50
45
45
45
40
40
35
35
30
30
B
85
85
60
60
55
55
55
60
60
55
50
45
40
C
110
110
100
100
90
90
90
85
85
80
80
65
65
* For individual “EA”, “EB”, and “EC” surge ratings, see table below.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• Off-state capacitance is measured at 1 MHz with a 2 V bias and is typical value.
Revision:01-Aug-11
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THYRISTOR
Surge Ratings
I
PP
2×10 s
Amps
150
250
500
I
PP
8×20 s
Amps
150
250
400
I
PP
10×160 s
Amps
90
150
200
I
PP
10×560 s
Amps
50
100
150
I
PP
10×1000 s
Amps
45
80
100
I
TSM
60Hz
Amps
20
30
50
di/dt
Amps/ s
500
500
500
Series
A
B
C
Thermal Considerations
Package
TO-92
Symbol
T
J
T
S
R
JA
Parameter
Operating Junction Temperature
Storage Temperature Range
Junction to Ambient on printed circuit
Value
-40 to +150
-40 to +150
90
Unit
/W
h
+I
d
I
T
I
S
I
H
I
DRM
-V
V
T
V
DRM
V
S
+V
I
PP
– Peak Pulse Current – %I
PP
100
Peak
Value
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
50
Half Value
0
0
t
r
t
d
t – Time (µs)
-I
z d
h
J
z d
d
Percent of V
S
Change – %
10
I
H
(T
C
= 25 ˚C)
14
12
8
6
4
2
0
-4
-6
-8
-40 -20
0
20
40 60
80 100 120 140 160
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20
0
20 40 60 80 100 120 140 160
I
H
25 ˚C
25 ˚C
Ratio of
Junction Temperature (T
J
) – ˚C
Case Temperature (T
C
) – ˚C
Revision:01-Aug-11
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