BC856S
Dual
PNP
Transistor
Features
■
■
B2
C1
C2
E2
Dual PNP transistors in one single package
No mutual interference between the transistors
(T
A
= 25°C unless otherwise noted)
Value
-80
-65
-5
-0.1
0.2
625
-55 to +150
-55 to +150
Absolute Maximum Ratings
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
B1
E1
SOT-363
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
SJA
T
J
T
STG
Unit
V
V
V
A
W
°C/W
°C
°C
Schematic Diagram
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
(T
A
= 25 °C unless otherwise noted)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
obo
f
T
Test Conditions
I
C
=-10µA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CB
=-30V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-5V,I
C
=-2mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
1
Min
-80
-65
-5
Typ
Max
Unit
V
V
V
nA
nA
-‐
-‐
-‐
-‐
-‐
-‐
-‐
-‐
0.7
-‐
-‐
-‐
-15
-100
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth
-‐
-‐
110
-‐
-0.1
-0.3
V
V
V
pF
MHz
-‐
-‐
-‐
-‐
100
I
C
=-10mA, I
B
=-0.5mA
V
CB
=-10V, f= 1MHz, I
E
=0
V
CE
=-5V, I
C
=-10mA,
f= 100MHz
-‐
2.5
-‐
-‐
-‐
Note: 1
pulse test: PWΚ350μS, ۷Κ2%
.
1/4
BC856S
Dual
PNP
Transistor
Typical Characteristics Curves
-8
(T
A
= 25°C unless otherwise noted)
1000
Static Characteristic
COMMON
EMITTER
T
a
=25
h
FE
-24uA
-21uA
h
FE
—— I
C
-30uA
(mA)
-6
-27uA
T
a
=100
I
C
COLLECTOR CURRENT
-4
-18uA
-15uA
-12uA
DC CURRENT GAIN
T
a
=25
100
-2
-9uA
-6uA
I
B
=-3uA
-0
-2
-4
-6
-8
COMMON EMITTER
V
CE
= -5V
10
-0.1
-1
-10
-100
-0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1
V
CEsat
——
I
C
-2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
-1
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
-0.1
T
a
=100
T
a
=100
T
a
=25
=20
-0.01
-0.1
-1
-10
-100
-0.1
-0.1
-1
-10
=20
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-100
I
C
—— V
BE
500
f
T
——
I
C
(mA)
I
C
-10
f
T
T
a
=25
TRANSITION FREQUENCY
100
T
a
=100
COLLECTOR CURRENT
-1
(MHz)
-0.1
-0.0
COMMON EMITTER
V
CE
=-5V
-0.3
-0.6
-0.9
-1.2
T
a
=25
10
-0.1
COMMON EMITTER
V
CE
=-5V
-1
-10
-100
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
2/4
BC856S
Dual
PNP
Transistor
Typical Characteristics Curves
C
ob
/ C
ib
30
(T
A
= 25°C unless otherwise noted)
P
C
250
—— V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
COLLECTOR POWER DISSIPATION
P
C
(mW)
200
——
T
a
T
a
=25
(pF)
10
C
ib
C
150
CAPACITANCE
C
ob
100
50
1
-0.1
-1
-10
-20
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
)
3/4
详细参数
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