BC847x Series
NPN Small Signal Transistor
Features
Ideally Suited for Automatic Insertion
Complementary PNP Types Available (BC857x series)
RoHS Compliant
C
Applications
For Switching and
RF
Amplifier Applications
E
B
Package:SOT-23
Schematic Diagram
Classifications
h
FE
Classification
h
FE
Range
BC847A
110-220
BC847B
200-450
BC847C
420-800
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
Collector Current-Continuous
Collector Power Dissipation
Operating Temperature
Storage Temperature Range
(T
A
= 25 °C unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
cm
I
C
P
C
T
J
T
STG
Rating
50
45
6.0
300
100
350
150
-55
to +150
UNIT
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
Parameter
Collector
Cut-off Current
DC
Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Voltage
Transition
Frequency
Collector
Output Capacitance
Noise Figure
I
CBO
h
FE
(T
A
= 25 °C unless otherwise noted)
Test Condition.
V
CB
=30V
V
CE
=5.0V
I
C
=10mA
I
C
=100mA
I
C
=10mA
I
C
=100mA
V
CE
=5.0V
V
CE
=5.0V
I
E
=0
I
C
=2.0mA
I
B
=0.5mA
I
B
=5.0mA
I
B
=0.5mA
I
B
=5.0mA
I
C
=2.0mA
I
C
=10mA
Min.
-
110
-
-
-
-
0.58
-
-
-
-
Typ.
-
-
0.09
0.2
0.7
0.9
-
-
300
2.5
1.0
Max.
0.015
800
0.25
0.6
-
-
0.7
0.75
-
4.5
10
V
V
V
V
V
V
MHz
pF
dB
Unit
uA
Symbol
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
BE(1)
V
BE(2)
f
T
C
ob
NF
V
CE
=5.0V IC=10mA f=100MHz
V
CB
=10V I
E
=0 f=1.0MHz
V
CE
=6.0V I
C
=0.1mA
R
g
=10KΩ f=1.0KHz
Thermal
Characteristics
Parameter
Typical
Thermal Resistance
from
Junction
to
Ambient
Symbol
R
θJA
Value
410
Unit
°C/W
1/3
BC847x Series
NPN Small Signal Transistor
Ratings and Characteristic Curves
Static Characteristic
10
(mA)
8
COMMON
EMITTER
T
a
=25
℃
h
FE
20uA
18uA
16uA
14uA
12uA
3000
h
FE
——
I
C
COMMON EMITTER
V
CE
= 5V
1000
T
a
=100
℃
I
C
COLLECTOR CURRENT
6
DC CURRENT GAIN
T
a
=25
℃
100
4
10uA
8uA
6uA
4uA
2
0
0
1
2
3
4
5
I
B
=2uA
6
7
10
1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
10
I
C
(mA)
100
1000
V
BEsat
——
β=20
I
C
500
V
CEsat
β=20
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
——
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
T
a
=25
℃
T
a
=100
℃
100
600
T
a
=25
℃
T
a
=100
℃
400
200
0.1
1
10
100
10
0.1
1
10
100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
100
I
C
COMMON EMITTER
V
CE
=5V
——
V
BE
500
f
T
——
I
C
(mA)
I
C
T =1
00
℃
a
10
TRANSITION FREQUENCY
f
T
COLLECTOR CURRENT
1
(MHz)
T =2
5
℃
a
100
COMMON EMITTER
V
CE
=5V
T
a
=25
℃
10
0.25
0.1
0.2
0.4
0.6
0.8
1.0
2
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
4
6
8
I
C
(mA)
10
12
2/3
BC847x Series
NPN Small Signal Transistor
Ratings and Characteristic Curves
C
ob
/C
ib
100
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
(pF)
10
C
ib
CAPACITANCE
C
C
ob
1
0.1
0.1
1
10
30
REVERSE VOLTAGE
V
(V)
Package Outline Dimensions
SOT-23
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
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