BC817-16W SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
0.087(2.20)
0.078(2.00)
45 Volts
POWER
300 mW
• NPN epitaxial silicon, planar design
• Collector current I
C
= 500mA
• In compliance with EU RoHS 2002/95/EC directives
0.087(2.20)
0.070(1.80)
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.001 ounce, 0.005 gram
• Device Marking : BC817-16W : 8S
BC817-25W : 8V
BC817-40W : 8W
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.004(0.10)MAX.
0.044(1.10)
0.035(0.90)
0.016(0.40)
0.008(0.20)
MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation ( NOTE )
Junction and Storage Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
TOT
T
J
, T
STG
Value
45
50
5.0
500
300
-55 to +150
UNIT
V
V
V
mA
mW
o
C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Ambient ( NOTE )
SYMBOL
R
θJA
Value
420
UNIT
o
C
0.004(0.10)MIN.
• General purpose amplifier applications
/W
NOTE : Transistor mounted on FR-5 board minimum pad mounting conditions.
March 15,2011-REV.02
PAGE . 1
BC817-16W SERIES
ELECTRICAL CHARACTERISTICS ( T
J
=25
o
C,unless otherwise notes )
PARAMETER
Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 )
Collector-Base Breakdown Voltage ( V
EB
=0V, Ic=10A )
Emitter-Base Breakdown Voltage ( I
E
=1A, Ic=0 )
Emitter-Base Cutoff Current ( V
EB
=5V )
Collector-Base Cutoff Current ( V
CB
=20V, I
E
=0 )
T
J
=25
o
C
T
J
=150
o
C
BC817-16W
BC817-25W
BC817-40W
SYMBOL
V
(BR)
CEO
V
(BR)
CBO
V
(BR)
EBO
I
EBO
I
CBO
MIN.
45
50
5.0
-
-
-
100
160
250
40
V
CE(SAT)
V
BE(ON)
C
CBO
f
T
-
-
-
100
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
7.0
-
MAX.
-
-
-
100
100
5.0
250
400
600
-
0.7
1.2
-
-
UNIT
V
V
V
nA
nA
A
-
-
-
-
V
V
pF
MHz
DC Current Gain ( Ic=100mA, V
CE
=1V )
h
FE
DC Current Gain ( Ic=500mA, V
CE
=1V )
Collector-Emitter Saturation Voltage ( Ic=500mA, I
B
=50mA )
Base-Emitte Voltage ( Ic=500mA, V
CE
=1.0V )
Collector-Base Capacitance (V
CB
=10V, I
E
=0, f=1MHz)
Current Gain-Bandwidth Product ( Ic=10mA, V
CE
=5V, f=100MHz )
March 15,2011-REV.02
PAGE . 2
BC817-16W SERIES
10
I
C
/I
B
= 10
1
I
C
/I
B
= 10
V
BE ( SAT )
(V)
T
J
= 150°C
1
V
CE ( SAT )
(V)
0.1
T
J
= 150°C
T
J
= 25°C
0.1
0.1
1
10
100
1000
0.01
0.1
T
J
= 25°C
1
10
100
1000
I
C
, Collector Current (mA)
I
C
, Collector Current (mA)
Fig.1 Base-Emitter Saturation Voltage
600
V
CE
= 1V
400
T
J
= 75°C
T
J
= 150°C
Fig.2 Collector-Emitter Saturation Voltage
600
T
J
= 75°C
400
T
J
= 150°C
V
CE
= 1V
hFE
200
T
J
= 25°C
0
0.1
1
10
100
1000
hFE
200
T
J
= 25°C
0
0.1
1
10
100
1000
I
C
, Collector Current (mA)
I
C
, Collector Current (mA)
Fig.3 BC817-16W：Typical DC Current Gain
800
T
J
= 75°C
600
T
J
= 150°C
V
CE
= 1V
Fig.4 BC817-25W：Typical DC Current Gain
100
C
EB
f =1MHz
T
J
=25°C
C
CB,
C
CB
(pF)
hFE
400
10
C
CB
200
T
J
= 25°C
0
0.1
1
10
100
1000
1
0.1
1
10
100
I
C
, Collector Current (mA)
V
CB
,
V
EB
(V)
Fig.5 BC817-40W：DC Current Gain
Fig.6 Typical Capacitance
March 15,2011-REV.02
PAGE . 3
BC817-16W SERIES
MOUNTING PAD LAYOUT
SOT-323
0.026
(0.66)
Unit：inch(mm)
0.034
(0.86)
0.026
(0.65)
0.026
(0.65)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
March 15,2011-REV.02
0.073
(1.85)
PAGE .
4
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