MMDT3904
Dual NPN
Transistor
Features
■
■
Epitaxial planar die construction
Ideal for
low
power amplification and switching
Absolute Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Value
60
40
5
0.2
0.2
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
SOT-363
Schematic
Diagram
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Cut-Off Current
(T
A
= 25 °C unless otherwise noted)
Symbol
Test Conditions
I
C
=10µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=30V,V
BE(off)
=3V
V
CE
=1V,I
C
=0.1mA
V
CE
=1V,I
C
=1mA
V
CE
=1V,I
C
=10mA
V
CE
=1V,I
C
=50mA
V
CE
=1V,I
C
=100mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=20V,I
C
=10mA,f=100MHz
V
CB
=5V,I
E
=0,f=1MHz
V
CE
=5V,I
c
=0.1mA,f=1kHz,R
S
=1KΩ
V
CC
=3V, V
BE(off)
=-0.5V
I
C
=10mA , I
B1
=-I
B2
= 1mA
V
CC
=3V, I
C
=10mA
I
B1
=-I
B2
=1mA
1/3
Min
60
40
5
Max
Unit
V
V
V
µA
µA
µA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CEX
h
FE(1)
h
FE(2)
-‐
-‐
-‐
0.05
0.05
0.05
-‐
-‐
-‐
40
70
100
60
30
-‐
-‐
300
DC Current Gain
h
FE(3)
h
FE(4)
h
FE(5)
-‐
-‐
0.2
0.3
0.85
0.95
V
V
V
V
MHz
pF
dB
nS
nS
nS
nS
Collector-Emitter Saturation Voltage
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
C
ob
NF
t
d
t
r
t
s
t
f
-‐
-‐
0.65
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
-‐
300
-‐
4
5
35
35
200
50
-‐
-‐
-‐
-‐
-‐
-‐
MMDT3904
Dual NPN
Transistor
Typical Characteristic Curves
14
Static Characteristic
70uA
COMMON
EMITTER
T
a
=25
℃
49uA
42uA
35uA
h
FE
300
h
FE
—— I
C
V
CE
= 1V
12
(mA)
63uA
56uA
250
T
a
=100 C
o
10
COLLECTOR CURRENT
8
DC CURRENT GAIN
200
I
C
150
6
28uA
4
21uA
14uA
100
T
a
=25 C
o
2
50
I
B
=7uA
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
1
10
I
C
(mA)
100
200
1.0
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=10
400
V
CEsat
——
β=10
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
T
a
=25
℃
300
0.6
200
T
a
=100
℃
T
a
=100
℃
0.4
100
T
a
=25
℃
0.2
0.1
0
1
10
100
200
1
10
100
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
200
300
P
c
——
T
a
T
a
=100 C
COLLECTOR CURRENT
10
o
COLLECTOR POWER DISSIPATION
P
c
(mW)
V
CE
=1V
0.9
1.0
100
I
C
(mA)
200
T
a
=25
℃
1
100
0.1
0.3
0
0.4
0.5
0.6
0.7
0.8
0
25
50
75
100
125
150
BASE-EMITTER VOLTAGE
V
BE
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2/3
MMDT3904
Dual NPN
Transistor
Package Outline Dimensions
SOT-363
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.100
0.150
2.000
2.200
1.150
1.350
2.150
2.400
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.004
0.006
0.079
0.087
0.045
0.053
0.085
0.094
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Suggested Pad Layout
Marking and Ordering Information
Device
MMDT3904
Package
SOT-363
Marking
K6N
Quantity
3000pcs / Reel
HSF Status
RoHS Compliant
www.goodarksemi.com
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