SGM8621
SGM8622
SGM8623
SGM8624
PRODUCT DESCRIPTION
The SGM8621(single), SGM8622 (dual), SGM8623 (single
with shutdown) and SGM8624 (quad) are low noise, low
voltage, and low power
operational amplifiers,
that can
be designed into a wide range of applications. The
SGM8621/2/3/4 have a high gain-bandwidth product of
3MHz, a slew rate of 1.7V/µs, and a quiescent current of
250µA/amplifier at 5V. The SGM8623 has a power-down
disable feature that reduces the supply current to
150nA.
The SGM8621/2/3/4 are designed to provide optimal
performance in low voltage and low noise systems.
They provide rail-to-rail output swing into heavy loads.
The input common-mode voltage range includes
ground, and the maximum input offset voltage is 3mV
for SGM8621/2/3/4. They are specified over the extended
industrial temperature range (−40°C to +125°C). The
operating range is from 2.5V to 5.5V.
The single version, SGM8621/8623, is available in SC70-5,
SO-8 and SOT23-5(6) packages. The dual version
SGM8622 is available in SO-8 and MSOP-8 packages.
The quad version SGM8624 is available in SO-16 and
TSSOP-16 packages.
250µA, 3MHz, Rail-to-Rail I/O
CMOS Operational Amplifier
FEATURES
•
Low Cost
•
Rail-to-Rail Input and Output
0.7mV Typical V
OS
•
High Gain-Bandwidth Product: 3MHz
•
High Slew Rate: 1.7V/µs
•
Settling Time to 0.1% with 2V Step: 2.1 µs
•
Overload Recovery Time: 1µs
•
Low Noise : 12 nV/
Hz
•
Operates on 2.5 V to 5.5V Supplies
•
Input Voltage Range = - 0.1 V to +5.6 V with V
S
= 5.5 V
•
Low Power
250µA/Amplifier Typical Supply Current
SGM8623 150nA when Disabled
•
Small Packaging
SGM8621 Available in SC70-5, SOT23-5 and SO-8
SGM8622 Available in MSOP-8 and SO-8
SGM8623 Available in SOT23-6and SO-8
SGM8624 Available in TSSOP-16 and SO-16
PIN CONFIGURATIONS
(Top View)
SGM8621
OUT
-V
S
1
2
4
SOT23-5 /SC70-5
-IN
+IN
3
4
6
5
NC = NO CONNECT
5
+V
S
NC
-IN
1
2
SGM8621/8623
8
7
DISABLE
(SGM8623 ONLY)
+V
S
OUT
NC
+IN 3
APPLICATIONS
Sensors
Audio
Active Filters
A/D Converters
Communications
Test Equipment
Cellular and Cordless Phones
Laptops and PDAs
Photodiode Amplification
Battery-Powered Instrumentation
OUT
-V
S
+IN
1
2
3
SGM8623
8623
SOT23-6
6
5
4
+V
S
DISABLE
-IN
-V
S
SO-8
SGM8624
OUT A
-IN A
1
2
3
4
5
6
7
8
NC = NO CONNECT
16 OUT D
15
-IND
SGM8622
OUT A
-IN A
+IN A
1
2
3
8
7
6
5
SO-8 / MSOP-8
+V
S
OUT B
-IN B
+IN B
+IN A
+V
S
+INB
-INB
OUT B
NC
14 +IND
13 -V
S
12 +INC
11
10
9
-INC
OUT C
NC
-V
S
4
TSSOP-16 / SO-16
Shengbang Microelectronics Co, Ltd
Tel: 86/451/84348461
www.sg-micro.com
REV. B
ELECTRICAL CHARACTERISTICS :V
S
= +5V
(At T
A
= +25℃,V
CM
= Vs/2, R
L
= 600Ω, unless otherwise noted)
SGM8621/2/3/4
PARAMETER
CONDITION
TYP
+25℃
INPUT CHARACTERISTICS
Input Offset Voltage (V
OS
)
Input Bias Current (I
B
)
Input Offset Current (I
OS
)
Common-Mode Voltage Range (V
CM
)
Common-Mode Rejection Ratio(CMRR)
Open-Loop Voltage Gain( A
OL
)
Input Offset Voltage Drift (∆V
OS
/∆
T
)
OUTPUT CHARACTERISTICS
Output Voltage Swing from Rail
Output Current (I
OUT
)
Closed-Loop Output Impedance
POWER-DOWN
Turn-On Time
Turn-Off Time
DISABLE
DISABLE
MIN/MAX OVER TEMPERATURE
+25℃
3
0℃ to
70℃
3.1
-40℃
to 85℃
3.3
-40℃ to
125℃
3.5
UNITS
mV
pA
pA
V
75
66
92
100
74
65
90
99
73
65
89
98
73
64
78
82
dB
dB
dB
dB
µV/℃
V
V
45
42
40
30
mA
Ω
ns
ns
0.8
2
2.5
5.5
2.5
5.5
78
345
2.5
5.5
77
350
2.5
5.5
76
380
V
V
V
V
dB
µA
nA
MHz
KHz
V/µs
µs
µs
nV/
fA/
MIN/
MAX
MAX
TYP
TYP
TYP
MIN
MIN
MIN
MIN
TYP
TYP
TYP
MIN
TYP
TYP
TYP
MAX
MIN
MIN
MAX
MIN
MAX
MAX
TYP
TYP
TYP
TYP
TYP
TYP
TYP
0.7
1
1
V
S
= 5.5V
V
S
= 5.5V, V
CM
= - 0.1V to 4 V
V
S
= 5.5V, V
CM
= - 0.1V to 5.6 V
R
L
= 600Ω ,Vo = 0.15V to 4.85V
R
L
=10KΩ ,Vo = 0.05V to 4.95V
-0.1 to +5.6
90
92
100
110
2.7
R
L
= 600Ω
R
L
= 10KΩ
F = 100KHz, G = +1
0.1
0.015
48
2.6
6.2
1.4
DISABLE
Voltage-Off
Voltage-On
POWER SUPPLY
Operating Voltage Range
Power Supply Rejection Ratio (PSRR)
Quiescent Current/ Amplifier (I
Q
)
Supply Current when Disabled
(SGM8623 only)
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Phase Margin(φ
O
)
Full Power Bandwidth(BW
P
)
Slew Rate (SR)
Settling Time to 0.1%( t
S
)
Overload Recovery Time
NOISE PERFORMANCE
Voltage Noise Density (e
n
)
Current Noise Density( i
n
)
f = 1kHz
f = 1kHz
12
3
Hz
Hz
V
s
= +2.5 V to + 5.5 V
V
CM
=
(-V
S
) + 0.5V
I
OUT
= 0
94
250
150
R
L
= 10KΩ
＜1%
distortion, R
L
= 600Ω
G = +1 , 2V Step, R
L
= 10KΩ
G = +1, 2 V Step, R
L
= 600Ω
V
IN
·Gain = Vs, R
L
= 600Ω
3
67
50
1.7
2.1
1
79
300
degrees TYP
Specifications subject to change without notice.
２
SGM8621/2/3 /4
PACKAGE/ORDERING INFORMATION
MODEL
ORDER
NUMBER
SGM8621XC5/TR
SGM8621
SGM8621XN5/TR
SGM8621XS/TR
SGM8622
SGM8623
SGM8624
SGM8622XMS/TR
SGM8622XS/TR
SGM8623XN6/TR
SGM8623XS/TR
SGM8624XS/TR
SGM8624XTS
PACKAGE
DESCRIPTION
SC70-5
SOT23-5
SO-8
MSOP-8
SO-8
SOT23-6
SO-8
SO-16
TSSOP-16
PACKAGE
OPTION
Tape and Reel, 3000
Tape and Reel, 3000
Tape and Reel, 2500
Tape and Reel, 3000
Tape and Reel, 2500
Tape and Reel, 3000
Tape and Reel, 2500
Tape and Reel, 2500
Tape and Reel, 3000
MARKING
INFORMATION
8621
8621
SGM8621XS
SGM8622XMS
SGM8622XS
8623
SGM8623XS
SGM8624XS
SGM8624XTS
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V+ to V- .
...........................................
7.5 V
Common-Mode Input Voltage
....................................
(–V
S
) – 0.5 V to (+V
S
) +0.5V
Storage Temperature Range
.....................
–65℃ to +150℃
Junction Temperature
.................................................
160℃
Operating Temperature Range
.................
–55℃ to +150℃
Package Thermal Resistance @ T
A
= 25℃
SC70-5,
θ
JA
............................
.................
................... 333
℃
/W
SOT23-5,
θ
JA
........................
......
................................ 190
℃
/W
SOT23-6,
θ
JA
..........
.................
................................... 190
℃
/W
SO-8,
θ
JA
.............................
.....
....................................125
℃
/W
MSOP-8,
θ
JA
..............
.....
........................................... 216
℃
/W
SO-16,
θ
JA
...................
.......
........................................... 82
℃
/W
TSSOP-16,
θ
JA
................
......
...................................... 105
℃
/W
Lead Temperature Range (Soldering 10 sec)
.....................................................
260℃
ESD Susceptibility
HBM............................................
.....
...............................1500V
MM...............................
.................
....................................400V
NOTES
1. Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
CAUTION
This integrated circuit can be damaged by ESD.
Shengbang Micro-electronics recommends that all
integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to
damage because very small parametric changes could
cause the device not to meet its published
specifications.
３
SGM8621/2/3 /4
TYPICAL PERFORMANCE CHARACTERISTICS
(At T
A
= +25℃,V
CM
= Vs/2, R
L
= 600Ω, unless otherwise noted)
Closed-Loop Output Voltage Swing
6
5
Output Voltage(Vp-p)
4
3
2
1
0
10
100
1000
Frequency(kHz)
10000
Vs = 5V
V
IN
= 4.9V
P-P
T
A
= 25℃
R
L
= 10KΩ
G=1
140
120
Output Impedance(
Ω
)
100
80
60
40
20
0
0.1
1
10
100
Frequency(kHz)
1000
10000
G = 100
G = 10
G =1
Vs = 5V
Output Impedance vs.Frequency
Positive Overload Recovery
Vs = ±2.5V
V
IN
= 50mV
R
L
= 620Ω
G = 100
2.5V
0V
0V
-50mV
0V
0V
-50mV
2.5V
Negative Overload Recovery
Vs = ±2.5V
V
IN
= 50mV
R
L
= 620Ω
G = 100
Time(5µs/div)
Time(1µs/div)
Large-Signal Step Response
Vs = 5V
G = +1
C
L
= 100pF
R
L
= 620Ω
Voltage(50mV/div)
Voltage(1V/div)
Small-Signal Step Response
Vs = 5V
G = +1
C
L
= 100pF
R
L
= 620Ω
Time(100µs/div)
Time(100µs/div)
４
SGM8621/2/3 /4
TYPICAL PERFORMANCE CHARACTERISTICS
(At T
A
= +25℃,V
CM
= Vs/2, R
L
= 600Ω, unless otherwise noted)
PSRR vs.Frequency
120
Vs = 5V
100
80
60
40
20
1
10
100
Frequency(kHz)
1000
CMRR vs.Frequency
110
100
90
80
CMRR(dB)
Vs = 5V
PSRR(dB)
70
60
50
40
30
20
0.01
0.1
1
10
Frequency(kHz)
100
1000
Small-Signal Overshoot vs.Load Capacitance
70
Small-Signal Overshoot(%)
60
50
40
30
20
10
0
1
10
100
1000
Load Capacitance(pF)
10000
Vs = 5V
R
L
= 10kΩ
T
A
= 25℃
G=1
+OS
-OS
Channel Separation vs.Frequency
140
130
Channel Separation(dB)
120
110
100
90
80
0.1
1
10
Frequency(kHz)
100
1000
Vs = 5V
R
L
= 620Ω
T
A
= 25℃
G=1
CMRR vs.Temperature
120
110
100
CMRR(dB)
90
80
70
60
-50 -30 -10
10 30 50 70
Temperature(℃)
90
110 130
V
CM
= - 0.1V to 5.6V
PSRR(dB)
120
PSRR vs.Temperature
V
S
= 5.5V
V
CM
= - 0.1V to 4 V
110
100
90
80
70
60
-50 -30 -10
V
S
= 2.5V to 5.5V
10 30 50 70
Temperature(℃)
90
110 130
５
SGM8621/2/3 /4
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
