SBC817-16/25/40
NPN General Purpose Transistors
FEATURES
l
l
l
High Current
Low Voltage
General Purpose Switching and Amplification
Package: SOT-23
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
Unit
R
θJA
P
D
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted )
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector–Emitter Breakdown Voltage
(V
EB
= 0, I
C
= 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µA)
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)EBO
V
(BR)CEO
45
—
—
V
V
(BR)CES
50
—
—
V
5.0
—
—
V
I
CBO
—
—
—
—
100
5.0
nA
µA
1/9
SBC817-16/25/40
NPN General Purpose Transistors
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mA, V
CE
= 1.0 V)
h
FE
SBC817–16
SBC817–25
SBC817–40
100
160
250
40
V
CE(sat)
—
—
—250
—400
—600
—
—
—
(I
C
= 500 mA, V
CE
= 1.0 V)
Collector–Emitter Saturation
Voltage (I
C
= 500 mA, I
B
= 50 mA)
Base–Emitter On Voltage
( I
C
= 500 mA, V
CE
= 1.0 V)
—
0.7
1.2
V
V
V
BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
( I
C
= 10 mA, V
CE
= 5.0 V
dc
, f = 100 MHz)
Output Capacitance (V
CB
=
10 V, f = 1.0 MHz)
f
T
C
obo
100
—
—
1
—
0
—
MHz
pF
MARKING AND
ORDERING INFORMATION
Device
SBC817-16LT1G
SBC817-16LT3G
SBC817-25LT1G
SBC817-25LT3G
SBC817-40LT1G
SBC817-40LT3G
Marking
6A
6A
6B
6B
6C
6C
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
2/9
SBC817-16/25/40
NPN General Purpose Transistors
TYPICAL CHARACTERISTICS
CURVES−
SBC817−16LT1G
300
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
h
FE
, DC CURRENT GAIN
V
CE
= 1 V
1
I
C
/I
B
= 10
200
25°C
150°C
25°C
0.1
−55°C
100
−55°C
0
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
150°C
I
C
/I
B
= 10
−55°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
3/9
SBC817-16/25/40
NPN General Purpose Transistors
TYPICAL CHARACTERISTICS
CURVES
− SBC817−16LT1G
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.0
T
J
= 25°C
0.8
+1
q
VC
for V
CE(sat)
0
0.6
I
C
= 10 mA
100 mA
300 mA
500 mA
-1
0.4
0.2
0
0.01
-2
q
VB
for V
BE
0.1
1
I
B
, BASE CURRENT (mA)
10
100
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 5. Saturation Region
Figure 6. Temperature Coefficients
100
C, CAPACITANCE (pF)
C
ib
10
C
ob
1
0.1
10
1
V
R
, REVERSE VOLTAGE (VOLTS)
100
Figure 7. Capacitances
4/9
SBC817-16/25/40
NPN General Purpose Transistors
TYPICAL CHARACTERISTICS
CURVES−SBC817-25LT1G
500
150°C
h
FE
, DC CURRENT GAIN
400
300
200
−55°C
100
0
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 1 V
1
I
C
/I
B
= 10
150°C
25°C
0.1
−55°C
25°C
0.001
0.01
0.1
1
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector
Current
−55°C
25°C
150°C
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
I
C
/I
B
= 10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
V
CE
= 5 V
−55°C
25°C
150°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
1000
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
Figure 11. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
5/9
详细参数
全文预览
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
