CMT35N03G
25V N-C
HANNEL
E
NHANCEMENT
-M
ODE
M
OSFET
APPLICATION
Vds=25V
R
DS(ON)
=8.5 mΩ (Max.) , VGS
@10V,
Ids@30A
R
DS(ON)
=13 mΩ (Max.), VGS
@4.5V,
Ids@30A
FEATURES
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
PIN CONFIGURATION
TO-252
SYMBOL
D
Front View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics
(TA=25℃ unless otherwise notes)
Rating
Drain - Source Voltage
Gate -Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Symbol
V
DS
V
GS
I
D
I
DM
T
A
=25℃
T
A
=75℃
P
D
P
D
T
J
/ T
STG
R
θJC
2)
Value
25
±20
30
260
60
23
-55 to150
1.8
50
Unit
V
V
A
A
W
W
℃
℃/W
℃/W
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction – to –Case Thermal Resistance
Junction – to Ambient Thermal Resistance (PCB mount)
R
θJA
Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation
2
2. 1-in 2oz Cu PCB board
3. Guaranteed by design ; not subject to production testing
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 1
CMT35N03G
25V N-C
HANNEL
E
NHANCEMENT
-M
ODE
M
OSFET
ORDERING INFORMATION
Part Number
CMT35N03GN252
Package
TO-252
ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise notes)
Symbol
Parameter
Drain-Source Breakdown Voltage
Drain-Source On-State Resistancem
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=4.5V, I
D
=30A
V
GS
=10V, I
D
=30A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=15V, I
D
=15A
V
DS
=25V, V
GS
=0V
V
GS
=
±
20V
, V
DS
=0V
I
D
=35A
V
DS
=15V
V
GS
=10V
V
DD
=15V
I
D
=1A
R
G
=6Ω
R
L
=15Ω
V
GEN
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
Min.
25
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
9.5
6.5
1.8
12
-
-
10
3.5
3
12
4
32
6
1180
270
145
Max.
-
13.0
9.0
3
-
1
±100
25
10
65
-
-
-
-
-
-
-
Units
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Static
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Gate-Source Forward Leakage
3)
Dynamic
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
Parameter
Diode Forward Voltage
Max. Diode Forward Current
Test Conditions
I
S
=20A, V
GS
=0V
Min.
-
-
Typ.
0.87
-
Max.
1.5
20
Units
V
A
I
s
Notes:
Pulse test : Pulse width <300us , duty cycle <2%.
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 2
CMT35N03G
25V N-C
HANNEL
E
NHANCEMENT
-M
ODE
M
OSFET
TYPICAL
CHARACTERISTICS
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 3
CMT35N03G
25V N-C
HANNEL
E
NHANCEMENT
-M
ODE
M
OSFET
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 4
CMT35N03G
25V N-C
HANNEL
E
NHANCEMENT
-M
ODE
M
OSFET
PACKAGE DIMENSION
TO-252
B
R
C
E
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
V
4
1
2
3
K
S
A
U
L
G
J
H
D
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 5
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