CMT2N7000
S
MALL
S
IGNAL
MOSFET
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring
up to 200mA DC and can deliver pulsed currents up to
500mA. This product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
FEATURES
!
!
!
!
High Density Cell Design for Low R
DS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
PIN CONFIGURATION
TO-92
SYMBOL
D
Top View
SOURCE
DRAIN
GATE
G
1
2
3
S
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT2N7000
Package
TO-92
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1.0MΩ)
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
Derate above 25℃
Operating and Storage Temperature Range
Thermal Resistance
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
, T
STG
θ
JA
T
L
Symbol
V
DSS
V
DGR
I
D
I
DM
V
GS
V
GSM
P
D
Value
60
60
200
500
±20
±40
350
2.8
-55 to 150
357
300
V
V
mW
mW/℃
℃
℃/W
℃
Unit
V
V
mA
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 1
CMT2N7000
S
MALL
S
IGNAL
MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT2N7000
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 10
μA)
Drain-Source Leakage Current
(V
DS
= 48 V, V
GS
= 0 V)
(V
DS
= 48 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward
(V
gsf
= 15 V, V
DS
= 0 V)
Gate Threshold Voltage *
(V
DS
= V
GS
, I
D
= 1.0 mA)
Static Drain-Source On-Resistance *
(V
GS
= 10 V, I
D
= 0.5A)
Drain-Source On-Voltage *
(V
GS
= 10 V, I
D
= 0.5A)
On-State Drain Current *
(V
GS
= 5 V, V
DS
= 10 V)
Forward Transconductance (V
DS
= 10 V, I
D
= 200mA) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 15 V, I
D
= 500 mA,
V
gen
= 10 V, R
G
= 25Ω, R
L
= 30Ω) *
Symbol
V
(BR)DSS
I
DSS
1.0
1.0
I
GSSF
V
GS(th)
R
DS(on)
5.0
V
DS(on)
2.5
I
d(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
60
100
60
25
5.0
10
10
mA
mmhos
pF
pF
pF
ns
ns
V
0.8
-10
3.0
μA
mA
nA
V
Ω
Min
60
Typ
Max
Units
V
* Pulse Test: Pulse Width
≦300µs,
Duty Cycle
≦2%
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 2
CMT2N7000
S
MALL
S
IGNAL
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 3
CMT2N7000
S
MALL
S
IGNAL
MOSFET
PACKAGE DIMENSION
TO-92
θ
A
A1
b
D
D1
E
L
e
A
θ
θ1
A1
E
L
b
D
e
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
θ1
D1
Page 4
CMT2N7000
S
MALL
S
IGNAL
MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage.
CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
Use of CMC products in such applications is
In order to minimize risks associated with the customer’s applications, the
use in life-support applications, devices or systems or other critical applications.
understood to be fully at the risk of the customer.
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
Sales & Marketing
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
T E L : +886-2-8692 1591
F A X : +886-2-8692 1596
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 5
Linux开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
