BZX584B5V1
thru
BZX584B20
Surface Mount Zener Diodes
Vz Range:
5.1
to
20V
Power Dissipation:
150mW
Features
■
Planar
die construction
power dissipation
■
150mW
(T
A
=25°C unless otherwise noted）
Characteristic
Forward Voltage
Power Dissipation
@I
F
=10mA
Absolute Maximum Ratings
Schematic Diagram
Package: SOD-523
Symbol
V
F
P
D
R
θ
JA
T
J
T
STG
Value
0.9
150
Unit
V
mW
°C/W
Thermal Resistance
from
Junction to Ambient
JunctionTemperature
Storage Temperature
833
150
-55
to
+150
°C
°C
Electrical Characteristics
(T
A
=25°C unless otherwise noted）
Typical
Maximum Zener
Impedance (Note 2)
Maximum
Reverse
Current
Temperature
Coefficent
@I
ZT
=5 mA
mV/°C
V
Z
@I
ZT
Nom(V)
BZX584B5V1
BZX584B5V6
BZX584B6V2
BZX584B6V8
BZX584B7V5
BZX584B8V2
BZX584B9V1
BZX584B10
BZX584B11
BZX584B12
BZX584B13
BZX584B15
BZX584B16
BZX584B18
BZX584B20
2Z2
2Z3
2Z4
2Z5
2Z6
2Z7
2Z8
2Z9
2Y1
2Y2
2Y3
2Y4
2Y5
2Y6
2Y7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
Min(V) Max(V)
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
Z
ZT
@I
ZT
Ω
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
Z
ZK
@I
ZK
I
ZK
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
I
R
μA
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
V
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
Min
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
Max
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
Zener Voltage Range (Note 1)
Type Number
Type
Code
Notes:
1. Tested with pulses, period=5ms,pulse width =300μs.
2. f=1kHz.
1/3
BZX584B5V1
thru
BZX584B20
Surface Mount Zener Diodes
Vz Range:
5.1
to
20V
Power Dissipation:
150mW
Typical Electrical Characteristic Curves
Zener Characteristics
(
V
Z
5.1V to 20 V
)
100
20
Temperature Coefficients
TYPICAL T
a
VALUES FOR
BZX584Bxxx SERIES
P
D
=150mW
I
Z
, ZENER CURRENT (mA)
Pulsed
θ
VZ
, TEMPERATURE COEFFICIENT (mV/
℃
)
T
a
=25
°C
15
10
V
Z
@ I
ZT
10
5.1
9.1
11
6.2
5.6
6.8
7.5
8.2
12
13
10
15
16
18
20
5
1
0.5
0
4
6
8
10
12
14
16
18
20
22
4
6
8
10
12
14
16
18
20
22
V
Z
, ZENER VOLTAGE (V)
V
Z
, NOMINAL ZENER VOLTAGE (V)
0.1
Typical Leakage Current
Pulsed
Typical Capacitance
1000
T
a
=25
°C
f=1MHz
I
R
, LEAKAGE CURRENT (uA)
C, CAPACITANCE (pF)
0.01
100
0V BIAS
1V BIAS
T
a
=100
°C
1E-3
10
T
a
=25
°C
BIAS AT
50% OF V
Z
NOM
1E-4
4
6
8
10
12
14
16
18
20
22
1
4
6
8
10
12
14
16
18
20
22
V
Z
, NOMINAL ZENER VOLTAGE (V)
V
Z
, NOMINAL ZENER VOLTAGE (V)
Effect of Zener Voltage on Zener Impedance
1000
200
Power Derating Curve
T
a
=25
°C
f=1kHz
100
Z
ZT
, DYNAMIC IMPEDANCE(Ω)
(mW)
POWER DISSIPATION
P
D
22
I
Z(AC)
=0.1I
Z(DC)
150
100
10
I
Z
=5mA
50
I
Z
=1mA
1
4
6
8
10
12
14
16
18
20
0
0
25
50
75
100
125
150
V
Z
, NOMINAL ZENER VOLTAGE (V)
AMBIENT TEMPERATURE
T
a
(
°C
)
2/3
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