AM4502C
BYD Microelectronics Co., Ltd.
P & N-Channel MOSFET
General Description
The AM4502C uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge.
This device is suitable for used as DC-DC converters and power
managements in portable and battery-powered products.
Features
•
N-Channel:
V
DS
(V) =30V
P-Channel:
V
DS
(V) =-30V
•
Low on-state resistance
N-Channel:
R
DS(on)
=
16 mΩ
MAX (V
GS
= 10V, I
D
=10A)
R
DS(on)
=
20 mΩ
MAX (V
GS
= 4.5V, I
D
= 8.4A)
P-Channel:
R
DS(on)
=
23 mΩ
MAX (V
GS
= -10V, I
D
=-8.5A)
R
DS(on)
=
33 mΩ
MAX (V
GS
=-4.5V, I
D
=-6.8A)
•
Fast switching speed
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
a
SYMBOL N-Channel P-Channel UNIT
V
DSS
V
GSS
30
20
10
8.1
±50
-30
-25
-8.5
-6.8
±50
V
V
A
A
T
A
=25℃
T
A
=70℃
b
I
D(DC)
I
D(pulse)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Contnuous Source Current (Diode
Conduction)
a
T
A
=25℃
a
T
A
=70℃
I
S
P
T
T
ch
T
stg
2.3
2.1
1.3
150
-2.1
2.1
1.3
A
W
℃
℃
Operating Junction and Storage
Temperature Range
-55~+150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t<=10sec
R
θJA
Maximum Junction-to-Ambient
Steady State
Maximum
62.5
110
Units
℃/W
℃/W
Note a.
Mounted on FR4 Board of 1”x1”.
b.
Pulse width limited by maximum junction temperature
Caution:
These values must not be exceeded under any conditions.
Datasheet
ES-BYD-WDZCE03D-065
Rev.A/0
Page 1 of 8
BYD Microelectronics Co., Ltd.
AM4502C
Ordering Information
Part Number:
Package:
AM4502C
SOIC8
Electrical Characteristics (T
A
= 25
℃
)
CHARACTERISTIC
Gate Cut-off Votage
Gate-Body Leakage
Zero Gate Votage Drain Current
On-State Drain Current
SYMBOL
V
GSS(off)
I
GSS
I
DSS
I
D(on)
TEST CONDITION
V
DS
=V
GS
,I
D
=250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=20V
V
DS
=0V,V
GS
=-20V
V
DS
=24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
V
DS
=5V,V
GS
=10V
V
DS
=-5V,V
GS
=-10V
V
GS
=10V,I
D
=10A
Drain -Source On-Restance
r
DS(on)
V
GS
=4.5V,I
D
=8.4A
V
GS
=-10V,I
D
=-8.5A
V
GS
=-4.5V,I
D
=-6.8A
Forward Transconductance
Pulsed Source Current (Body Diode)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
g
fs
I
SM
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
N-Channel
V
DS
=15V,V
GS
=4.5V,
I
D
=10A
P-Channel
V
DS
=-15V,V
GS
=-4.5V,
I
D
=-10A
N
P
N
P
N
V
DS
=15V,I
D
=10A
V
DS
=-15V,I
D
=-9.5A
Ch MIN TYP MAX UNIT
N
P
N
P
N
P
N 20
P -50
N
P
N
P
40
31
5
12
13
3.3
5.8
4.5
12
20
15
9
16
70
62
20
46
16
20
23
33
S
A
mΩ
1
-1
±100
±100
1
-1
V
nA
uA
A
nC
P
N
N-Channel
P
V
DD
=15V,V
GS
=10V,I
D
=1 N
A,R
GEN
=25
Ω
P
P-Channel
N
V
DD
=-15V,V
GS
=-10V, P
N
I
D
=-1A, R
GEN
=15
Ω
P
nS
Datasheet
ES-BYD-WDZCE03D-065
Rev.A/0
Page 2 of 8
BYD Microelectronics Co., Ltd.
AM4502C
Typical characteristics (25℃ unless noted)
Typical Electrical Characteristics(P-Channel)
0.04
50
40
30
20
10
0
0
0.5
1.5
2
2.5
3
3.5
V
DS
Drain-Source Voltage (V)
1
4
3.5V
4.5V
5V through 10V
4V
I
D
Drain Current (A)
R
DS(ON)
Resistance (Ω)
0.032
0.024
0.016
0.008
0
0
10
20
30
40
50
I
D
Drain Current (A)
Figure 2. O n-Re sistance with Drain Curre nt
V
GS
=4.5V
V
GS
=10V
3V
Figure 1. O n-Re gion Characte ristics
1.6
1.4
1.2
1
0.8
0.6
V
GS
=10V
R
DS(ON)
On Resistance (Ω)
I
D
=8.5A
0.06
0.05
0.04
0.03
0.02
0.01
0
0
2
4
6
8
10
V
GS
Gate to Source Voltage
（
V
）
Figure 4. On-Resistance Variation VS Gate to
S ource Voltage
Normalized R
DS(ON)
-50
-25
0
25
50
75
100 125 150
T
J
-Junction T emperature(
℃
)
Figure 3. O n-Re sistance Variations With
Te mpe rature
Datasheet
ES-BYD-WDZCE03D-065
Rev.A/0
Page 3 of 8
BYD Microelectronics Co., Ltd.
AM4502C
60
I
D
Drain Current (A)
50
40
30
20
10
0
V
D
=V
G
T
A
=-55
℃
25
℃
125
℃
0
1
2
3
4
5
6
VGS Gate to Source Voltage (V)
Figure 5. Transfe r Characte ristics
10
V
GS
Gate to source Voltage (V)
8
6
4
2
0
0
2000
V
D
=10V
I
D
=8.5A
C
iss
C-Capacitance (pF)
1500
1000
C
rss
C
oss
500
0
5
10
15
20
25
30
0
5
10
15
20
Qg T otal Gate Charge (nC)
Figure 7. Gate Charge C harate ristic
V
DS
Drain-to-Source Voltage (V)
Figure 8.C apacitance C haracte ristics
Datasheet
ES-BYD-WDZCE03D-065
Rev.A/0
Page 4 of 8
BYD Microelectronics Co., Ltd.
AM4502C
Typical Electrical Characteristics(N-Channel)
R
DS(ON)
Normalized Drain-Source
50
V
GS
=10V
I
D
Drain Current (A)
40
30
20
10
0
0
0.5
1
1.5
V
DS
Drain-Source Voltage (V)
Figure 1.O n-Re gion Characte ristics
1.6
1.4
Normalized R
DS(on)
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100 125 150
T
J
-Junction T emperature(
℃
)
Figure 3. O n-Re sistance Variations With
Te mpe rature
V
GS
=10V
I
D
=10A
2
1.7
ON-Resistance
1.4
1.1
0.8
0.5
0
10
20
30
40
50
I
D
Drain Current(A)
Figure 2. O n-Re sistance ws Drain Curre nt
4.5V
6.0V
10V
6V
4V
3V
2
0.05
R
DS(ON)
On Resistance (Ω)
0.04
0.03
0.02
0.01
0
2
4
6
8
V
GS
Gate to Source Voltage
（
V
）
10
T
A
=25
℃
I
D
=10A
Figure 4. O n-Re sistance Variation VS Gate
to Source Voltage
Datasheet
ES-BYD-WDZCE03D-065
Rev.A/0
Page 5 of 8
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
