LITE-ON
SEMICONDUCTOR
97A8
TRIACs
0.8AMPERES RMS
600 VOLTS
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
FEATURES
One-Piece, Injection-Molded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes
(Quadrants) for all possible Combinations of Trigger
Sources, and especially for Circuits that Source Gate
Drives
All Diffused and Glassivated Junctions for Maximum
Uniformity of Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/msec
at 110
℃
)
Pb-Free Package
TO-92 (TO-226AA)
TO-92
DIM.
A
B
C
D
E
F
G
I
MIN.
4.45
4.32
3.18
1.15
2.42
12.7
2.04
3.43
MAX.
4.70
5.33
4.19
1.39
2.66
------
2.66
-----
All Dimensions in millimeter
PIN A SSIGNMENT
1
2
3
Main Terminal 1
Gate
Main Terminal 2
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
Rating
Peak Repetitive Off– State Voltage (T
J
= -40 to 125
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
600
Volts
Symbol
Value
Unit
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (T
C
= 50
℃
)
Peak Non-Repetitive Surge Current
Full Cycle Sine Wave 60 Hz (Tj =25
℃
)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power ( t
≦
2.0us ,Tc = 80
℃
)
Average Gate Power (Tc = 80
℃
, t
≦
8.3 ms )
Peak Gate Current ( t
≦
2.0us ,Tc = 80
℃
)
Peak Gate Voltage ( t
≦
2.0us ,Tc = 80
℃
)
Operating Junction Temperature Range
Storage Temperature Range
I
T(RMS)
I
TSM
It
P
GM
P
G(AV)
I
GM
V
GM
2
0.8
9.0
0.34
5.0
0.1
1.0
5.0
-40 to +110
-40 to +150
Amp
Amps
As
Watt
Watt
Amp
Volts
℃
℃
2
T
J
Tstg
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV. 2, Oct-2010, KTXD23
RATING AND CHARACTERISTIC CURVES
97A8
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Lead
- Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Symbol
RthJL
RthJC
RthJA
Value
60
75
150
260
Unit
℃
/
W
℃
T
L
ELECTRICAL CHARACTERISTICS
(T
c
=25
℃
unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current
(VD=Rated VDRM and VRRM; Gate OPen)
T
j
=25℃
T
j
=110℃
I
DRM
I
RRM
----
----
----
----
10
100
uA
uA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(I
TM=
± 1A Peak @Tp
≦
2.0 ms, Duty Cycle
≦
2%)
V
TM
I
GT1
I
GT2
I
GT3
I
GT4
----
----
----
----
----
----
----
----
----
----
1.9
5.0
5.0
5.0
7.0
Volts
Gate Trigger Current (V
D
= 12 Vdc; R
L
= 100 Ohms)
mA
Holding Current (V
D
= 12 V, Initiating Current = ± 200 mA, Gate
Open)
Turn-On Time (V
D
= Rated VDRM , I
TM
= 1.0 A pk, I
G
= 25 mA)
I
H
----
1.5
10
mA
tgt
V
GT1
V
GT2
V
GT3
V
GT4
I
L1
I
L2
I
L3
I
L4
V
GD
----
----
----
----
----
----
----
----
----
0.1
2
0.66
0.77
0.84
0.88
1.6
10.5
1.5
2.5
----
----
2.0
2.0
2.0
2.5
15
20
15
15
----
us
Gate Trigger Voltage (V
D
= 12 Vdc; R
L
=100 Ohms)
Volts
Latching Current (V
D
=12V,I
G
= 10 mA)
mA
Gate Non-Trigger Voltage (V
D
= 12V, R
L
= 100 Ohms , T
J
=110
℃)
Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(V
D
=Rated V
DRM
,Exponential Waveform, Gate Open, T
J
=110
℃
)
dv/dt
20
60
----
V/us
RATING AND CHARACTERISTIC CURVES
97A8
0.8
IT(RMS), RMS ON-STATE CURRENT(AMPS)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
Ta, AMBIENT TEMPERATURE(
℃
)
1.2
IT(RMS), RMS ON-STATE CURRENT(AMPS)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
Tc, CASE TEMPERATURE(
℃
)
Figure 1. RMS Current Deratiing Versus
Ambient Temperature
Figure 2. RMS Current Deratiing Versus
Case Temperature
1.2
10
1.0
P(AV), POWER PISSIPATION (WATTS)
0.8
ITM, INSTANTANEOUS ON-STATE CURRENT (AMP)
tpy.
max.
1
0.6
0.4
0.2
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
IT(RMS),RMS ON-STATE CURRENT (AMPS)
Figure 3. Power Dissipation
0.01
0.4
0.8
1.2
1.6
2.0
2.4
2.8
VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 4. On-State Characteristics
RATING AND CHARACTERISTIC CURVES
97A8
1
R(t), TRANSENT THERMAL RESISTANCE (NORMALIZED)
16
ITSM, PEAK SURGE CURRENT (AMPS)
12
0.1
8
CYCLE
4
T
J
=25℃
f= 60MHz
0.01
1.00E-1
1.00E+0
1.00E+1
1.00E+2
1.00E+3
1.00E+4
0
1
10
100
t, TIME (ms)
NUMBER OF CYCLES
Figure 5. Transient Thermal Response
Figure 6. Maximum Allowable Surge Current
100.0
1.2
1.1
Q4
Q3
ITSM, PEAK SURGE CURRENT (AMPS)
ITSM, PEAK SURGE CURRENT (AMPS)
1.0
Q2
Q4
10.0
Q2
Q3
0.9
Q1
0.8
0.7
0.6
0.5
0.4
Q1
1.0
0.1
-50
-25
0
25
50
75
100
125
0.3
-50
-25
0
25
50
75
100
125
Tj, JUNCTION TEMPERATURE (
℃
)
Tj, JUNCTION TEMPERATURE (
℃
)
Figure 7. Typical Gate Trigger Current Versus
Junction Temperature
100
10
Figure 8. Typical Gate Trigger Voltage Versus
Junction Temperature
IL, LATCHING CURRENT (mA)
Q2
10
IH, HOLDING CURRENT (mA)
MT2 Negative
1
Q4
Q3
1
Q1
MT2 Positive
0.1
-50
-25
0
25
50
75
100
125
0.1
-50
-25
0
25
50
75
100
125
Tj, JUNCTION TEMPERATURE (
℃
)
Tj, JUNCTION TEMPERATURE (
℃
)
Figure 9. Typical Latching Current Versus
Junction Temperature
Figure 10. Typical Holding Current Versus
Junction Temperature
Legal Disclaimer Notice
97A8
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm
the latest product information and specifications before final design, purchase or
use.
LSC makes no warranty, representation or guarantee regarding the suitability of
its products for any particular purpose, nor does LSC assume any liability for
application assistance or customer product design. LSC does not warrant or
accept any liability with products which are purchased or used for any
unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property
rights of LSC.
LSC products are not authorized for use as critical components in life support
devices or systems without express written approval of LSC.
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