BC846AW ~ BC850CW
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 100mA
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. .
(Halogen Free)
30/45/65 Volts
POWER
250 mWatts
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0001 ounce, 0.005 gram
Device Marking:
BC846AW=46A
BC846BW=46B
BC847AW=47A
BC847BW=47B
BC848AW=48A
BC848BW=48B
BC849BW=49B
BC850BW=50B
BC847CW=47C BC848CW=48C
BC849CW=49C BC850CW=50C
ABSOLUTE RATINGS
Parameter
Collector - Emitter Voltage
BC846W
BC847W, BC850W
BC848W, BC849W
BC846W
BC847W, BC850W
BC848W, BC849W
BC846W
BC847W, BC850W
BC848W, BC849W
Symbol
V
CEO
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Units
V
Collector - Base Voltage
V
CBO
V
Emitter - Base Voltage
V
EBO
V
Collector Current - Continuous
I
C
mA
THERMAL CHARACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance
Junction Temperature
Storage Temperature
Symbol
P
TOT
R
JA
R
JC
T
J
T
STG
Value
250
500
100
-55 to 150
-55 to 150
Units
mW
O
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
April 23,2013-REV.02
PAGE . 1
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS
PA RA M E TE R
B C 8 4 6 AW,B W
B C 8 4 7 AW /B W/C W,B C 8 5 0 B W /C W
B C 8 4 8 AW /B W/C W,B C 8 4 9 B W /C W
B C 8 4 6 AW,B W
B C 8 4 7 AW /B W/C W,B C 8 5 0 B W /C W
B C 8 4 8 AW /B W/C W,B C 8 4 9 B W /C W
B C 8 4 6 AW,B W
B C 8 4 7 AW /B W/C W,B C 8 5 0 B W /C W
B C 8 4 8 AW /B W/C W,B C 8 4 9 B W /C W
S ymb o l
Te st C o nd i ti o n
MIN.
65
45
30
80
50
30
6
6
5
-
-
TYP.
MAX.
Uni ts
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e
V
(B R)
C E O IC =1 0 mA , IB =0
-
-
V
C o lle c to r - B a se B re a k d o wn Vo lta g e
V
(B R)
C B O IC =1 0
A
, IE =0
-
-
V
E mi tte r - B a se B re a k d o wn Vo lta g e
V
(B R)
E B O IE =1 0
A
, IC =0
-
-
V
E mi tte r-B a s e C uto ff C urre nt
C o lle c to r-B a s e C uto ff C urre nt
D C C urre nt Ga i n
B C 8 4 6 ~B C 8 4 8 S uffi x " AW "
B C 8 4 6 ~B C 8 5 0 S uffi x " B W "
B C 8 4 7 ~B C 8 5 0 S uffi x " C W"
B C 8 4 6 ~B C 8 4 8 S uffi x " AW "
B C 8 4 6 ~B C 8 5 0 S uffi x " B W "
B C 8 4 7 ~B C 8 5 0 S uffi x " C W"
I
E B O
I
C B O
V E B =5
V C B =3 0 V, IE =0
V C B =3 0 V, IE =0 ,T
J
=1 5 0
O
C
IC =1 0
A
, V C E =5 V
-
-
90
150
270
180
290
520
-
0 .7
0 .9
0 .6 6
-
-
100
15
5
-
nA
nA
A
-
h
FE
-
D C C urre nt Ga i n
h
FE
IC =2 mA , V C E =5 V
IC =1 0 mA , IB =0 .5 mA
IC =1 0 0 mA , IB =5 .0 mA
IC =1 0 mA , IB =0 .5 mA
IC =1 0 0 mA , IB =5 mA
IC =2 mA , V C E =5 V
IC =1 0 mA , V C E =5 V
V C B =1 0 V, IE =0 , f=1 MHz
11 0
200
4 20
-
-
0 .5 8
-
-
220
450
800
0 .2 5
0 .6
-
0 .7
0 .7 7
4 .5
-
C o lle c to r - E mi tte r S a tura ti o n Vo lta g e
B a se - E mi tte r S a tura ti o n Vo lta g e
B a se - E mi tte r Vo lta g e
C o lle c to r - B a se C a p a c i ta nc e
V
C E (S AT)
V
C E (S AT)
V
C E (S AT)
C
C BO
V
V
V
pF
April 23,2013-REV.02
PAGE . 2
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