PBC817DPN-25
DUAL NPN/PNP GENERAL PURPOSE TRANSISTORS
45
0.5
SOT-23 6L
Voltage
Current
-45V
-0.5A
Features
Unit: inch(mm)
General purpose amplifier applications
High collector current capability
Excellent DC current gain characteristics
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case : SOT-23 6L Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0005 ounces, 0.014 grams
Marking : 25C
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
LIMIT
o
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance from Junction to Ambient
(Note )
SYMBOL
NPN
PNP
UNITS
50
45
5
0.5
1
0.1
330
-55~150
378
o
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
T
J
,T
STG
R
θJA
-50
-45
-5
-0.5
-1
-0.1
V
V
V
A
A
A
mW
o
C
C/W
Note: Mounted on FR4 PCB at 1 inch square copper pad.
November 22,2018-REV.00
Page 1
PBC817DPN-25
Electrical Characteristics Q1
(T
A
=25 C unless otherwise noted)
PARAMETER
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON characteristics
DC Current Gain
(Note1)
Collector-Emitter Saturation Voltage
(Note1)
Base-Emitter Turn-on Voltage
(Note1)
Transition Frequency
h
FE
V
CE
= 1V, I
C
= 0.1A
V
CE
= 1V, I
C
= 0.5A
I
C
= 0.5A, I
B
= 50mA
160
40
-
-
-
-
400
-
-
0.7
V
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
I
C
= 10mA, I
B
= 0A
I
C
= 0.01mA, I
E
= 0A
I
E
= 0.01mA, I
C
= 0A
V
CB
= 20V, I
E
= 0A
V
EB
= 5V, I
C
= 0A
45
50
5
-
-
-
-
-
-
-
-
-
-
100
100
V
V
V
nA
nA
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
V
CE(SAT)
V
BE(ON)
V
CE
= 1V, I
C
= 0.5A
V
CE
= 5V, I
C
= 0.01A
F=100MHz
V
CB
= 10V, I
E
= 0A,
F=1MHz
-
-
1.2
V
f
T
100
-
-
MHz
Collector Output Capacitance
C
OB
-
7
-
pF
Note: 1. Pulse width<300us, Duty cycle<2%
November 22,2018-REV.00
Page 2
PBC817DPN-25
Electrical Characteristics Q2
(T
A
=25 C unless otherwise noted)
PARAMETER
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON characteristics
DC Current Gain
(Note1)
Collector-Emitter Saturation Voltage
(Note1)
Base-Emitter Turn-on Voltage
(Note1)
Transition Frequency
h
FE
V
CE
= -1V, I
C
= -0.1A
V
CE
= -1V, I
C
= -0.5A
I
C
= -0.5A, I
B
= -50mA
160
40
-
-
-
-
400
-
-
-0.7
V
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
I
C
= -10mA, I
B
= 0A
I
C
= -0.01mA, I
E
= 0A
I
E
= -0.01mA, I
C
= 0A
V
CB
= -20V, I
E
= 0A
V
EB
= -4V, I
C
= 0A
-45
-50
-5
-
-
-
-
-
-
-
-
-
-
-100
-100
V
V
V
nA
nA
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
V
CE(SAT)
V
BE(ON)
V
CE
= -1V, I
C
= -0.5A
V
CE
= -5V, I
C
= -0.01A
F=100MHz
V
CB
= -10V, I
E
= 0A,
F=1MHz
-
-
-1.2
V
f
T
100
-
-
MHz
Collector Output Capacitance
C
OB
-
7
-
pF
Note: 1. Pulse width<300us, Duty cycle<2%
November 22,2018-REV.00
Page 3
PBC817DPN-25
NPN TYPICAL CHARACTERISTIC CURVES
1.2
I
C
/I
B
= 10
0.9
T
J
=25℃
0.6
T
J
=125℃
0.3
T
J
=75℃
0.0
0.001
1
V
CE
= 2V
Base-emitter Saturation (V)
I
C
, Collector Current (A)
0.1
T
J
=125℃
0.01
T
J
=25℃
0.001
T
J
=75℃
0.01
0.1
1
0
0.3
0.6
0.9
1.2
I
C
, Collector Current (A)
Fig.1 Typical Base-Emitter Saturation Voltage
V
BE
, Base-Emitter Voltage (V)
Fig.2 Typical Base-Emitter Turn ON Voltage
Collector-emitter Saturation
(V)
0.2
100
0.15
T
J
=125℃
0.1
T
J
=75℃
0.05
T
J
=25℃
Input Capacitance (pF)
I
C
/I
B
= 10
f=1MHz
C
ib
10
0
0.001
1
0.01
0.1
1
0.1
1
10
I
C
, Collector Current (A)
Fig.3 Typical Collector-Emitter Saturation
V
EB
, Reverse Voltage (V)
Fig.4 Input Capacitance
100
600
f=1MHz
V
CE
= 1V
500
T
J
=125℃
T
J
=75℃
300
T
J
=25℃
200
100
0
0.001
Output Capacitance (pF)
DC current gain : hfe
400
10
C
ob
1
0.1
1
10
100
0.01
0.1
1
V
CB
, Reverse Voltage (V)
Fig.5 Output Capacitance
I
C
, Collector Current (A)
Fig.6 Typical DC Current Gain
November 22,2018-REV.00
Page 4
PBC817DPN-25
PNP TYPICAL CHARACTERISTIC CURVES
1.2
1
-Base-emitter Saturation (V)
0.9
T
J
=25℃
0.6
T
J
=125℃
T
J
=75℃
-I
C
, Collector Current (mA)
I
C
/I
B
= 10
V
CE
= -2V
0.1
T
J
=125℃
T
J
=75℃
0.01
T
J
=25℃
0.001
0.3
0.0
0.001
0.01
0.1
1
0
0.3
0.6
0.9
1.2
-I
C
, Collector Current (A)
Fig.1 Typical Base-Emitter Saturation Voltage
-V
BE
, Base-Emitter Voltage (V)
Fig.2 Typical Base-Emitter Turn ON Voltage
0.6
-Collector-emitter Saturation
(V)
100
Input Capacitance (pF)
I
C
/I
B
= 10
0.45
T
J
=125℃
0.3
T
J
=75℃
C
ib
10
0.15
T
J
=25℃
0
0.001
0.01
0.1
1
f=1MHz
1
0.01
0.1
1
10
-I
C
, Collector Current (A)
Fig.3 Typical Collector-Emitter Saturation
-V
EB
, Reverse Voltage (V)
Fig.4 Input Capacitance
100
600
f=1MHz
V
CE
= -1V
Output Capacitance (pF)
DC current gain : hfe
500
400
300
200
100
0
0.001
T
J
=75℃
T
J
=25℃
T
J
=125℃
C
ob
10
1
0.01
0.1
1
10
100
0.01
0.1
1
-V
CB
, Reverse Voltage (V)
Fig.5 Output Capacitance
-I
C
, Collector Current (A)
Fig.6 Typical DC Current Gain
November 22,2018-REV.00
Page 5
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