ESMT
DDR SDRAM
Features
JEDEC Standard
Internal pipelined double-data-rate architecture, two data access per clock cycle
Bi-directional data strobe (DQS)
On-chip DLL
Differential clock inputs (CLK and CLK )
DLL aligns DQ and DQS transition with CLK transition
Quad bank operation
CAS Latency : 2, 2.5, 3
Burst Type : Sequential and Interleave
Burst Length : 2, 4, 8
All inputs except data & DM are sampled at the rising edge of the system clock(CLK)
Data I/O transitions on both edges of data strobe (DQS)
DQS is edge-aligned with data for reads; center-aligned with data for WRITE
Data mask (DM) for write masking only
V
DD
= 2.3V ~ 2.7V, V
DDQ
= 2.3V ~ 2.7V
Auto & Self refresh
64ms refresh period, 4K cycle
SSTL-2 I/O interface
66pin TSOPII and 60 ball BGA package
M13S64164A
1M x 16 Bit x 4 Banks
Double Data Rate SDRAM
Ordering Information:
PRODUCT NO.
M13S64164A -5TG
M13S64164A -6TG
M13S64164A -5BG
M13S64164A -6BG
MAX FREQ
200MHz
166MHz
200MHz
166MHz
2.5V
BGA
V
DD
2.5V
PACKAGE
66TSOPII
COMMENTS
Pb-free
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2009
Revision : 1.4
1/48
ESMT
Functional Block Diagram
CLK
CLK
CKE
Address
Mode Register &
Extended Mode
Register
M13S64164A
Clock
Generator
Bank D
Bank C
Bank B
Row Decoder
Row
Address
Buffer
&
Refresh
Counter
Bank A
Sense Amplifier
Command Decoder
Control Logic
CS
RAS
CAS
WE
Data Control Circuit
Input & Output
Buffer
Latch Circuit
Column
Address
Buffer
&
Refresh
Counter
DM
Column Decoder
DQ
CLK, CLK
DLL
DQS
DQS
Pin Arrangement
60-Ball BGA Assignment (Top View)
x16
V
DD
DQ
0
V
DDQ
DQ
1
DQ
2
V
SSQ
DQ
3
DQ
4
V
DDQ
DQ
5
DQ
6
V
SSQ
DQ
7
NC
V
DDQ
LDQS
NC
V
DD
NC
LDM
WE
CAS
RAS
CS
NC
BA
0
BA
1
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
x16
V
SS
DQ
15
V
SSQ
DQ
14
DQ
13
V
DDQ
DQ
12
DQ
11
V
SSQ
DQ
10
DQ
9
V
DDQ
DQ
8
NC
V
SSQ
UDQS
NC
V
REF
V
SS
UDM
CLK
CLK
CKE
NC
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
1
A
V
SSQ
2
DQ15
V
DDQ
3
V
SS
DQ13
7
V
DD
DQ2
DQ4
DQ6
LDQS
8
DQ0
V
SSQ
9
V
DDQ
DQ1
DQ3
B
DQ14
C
D
E
F
G
H
J
K
L
M
DQ12
DQ10
DQ8
V
REF
V
SSQ
V
DDQ
V
SSQ
V
SS
CLK
DQ11
DQ9
UDQS
V
DDQ
V
SSQ
V
DDQ
V
DD
CAS
CS
BA0
A10/AP
66 PIN TSOP(II)
(400mil x 875mil)
(0.65 mm PIN PITCH)
DQ5
DQ7
NC
UDM
CLK
LDM
WE
NC
A11
A8
A6
A4
CKE
A9
A7
A5
V
SS
RAS
BA1
A0
A2
V
DD
A1
A3
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2009
Revision : 1.4
2/48
ESMT
Pin Description
(M13S64164A)
Pin Name
Function
Address inputs
- Row address A0~A11
- Column address A0~A7
A10/AP : AUTO Precharge
BA0, BA1 : Bank selects (4 Banks)
Data-in/Data-out
Row address strobe
Column address strobe
Write enable
Ground
Power
Bi-directional Data Strobe. LDQS
corresponds to the data on DQ0~DQ7;
UDQS correspond to the data on
DQ8~DQ15.
Pin Name
M13S64164A
Function
DM is an input mask signal for write
data. LDM corresponds to the data
on DQ0~DQ7; UDM correspond to
the data on DQ8~DQ15.
Clock input
Clock enable
Chip select
Supply Voltage for GDQ
Ground for DQ
Reference Voltage for SSTL-2
A0~A11,
BA0,BA1
LDM, UDM
DQ0~DQ15
RAS
CAS
WE
CLK, CLK
CKE
CS
V
DDQ
V
SSQ
V
REF
V
SS
V
DD
LDQS, UDQS
NC
No connection
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2009
Revision : 1.4
3/48
ESMT
Absolute Maximum Rating
Parameter
Voltage on any pin relative to V
SS
Voltage on V
DD
supply relative to V
SS
Voltage on V
DDQ
supply relative to V
SS
Storage temperature
Power dissipation
Short circuit current
Note:
Symbol
V
IN
, V
OUT
V
DD
V
DDQ
T
STG
P
D
I
OS
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
1
50
M13S64164A
Unit
V
V
V
°C
W
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operation Condition & Specifications
DC Operation Condition
Recommended operating conditions (Voltage reference to V
SS
= 0V, T
A
= 0 to 70 °C )
Parameter
Supply voltage
I/O Supply voltage
I/O Reference voltage
I/O Termination voltage (system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CLK and CLK inputs
Input Differential Voltage, CLK and CLK inputs
Input leakage current
Output leakage current
Output High Current (Normal strength driver)
(V
OUT
=V
DDQ
-0.373V, min V
REF
, min V
TT
)
Output Low Current (Normal strength driver)
(V
OUT
= 0.373V)
Output High Current (Weak strength driver)
(V
OUT
=V
DDQ
-0.763V, min V
REF
, min V
TT
)
Output Low Current (Weak strength driver)
(V
OUT
= 0.763V)
Symbol
V
DD
V
DDQ
V
REF
V
TT
V
IH
(DC)
V
IL
(DC)
V
IN
(DC)
V
ID
(DC)
I
I
I
OZ
I
OH
I
OL
I
OH
I
OL
Min
2.3
2.3
0.49*V
DDQ
V
REF
- 0.04
V
REF
+ 0.15
-0.3
-0.3
0.36
-2
-5
-16.8
+16.8
-9
+9
Max
2.7
2.7
0.51*V
DDQ
V
REF
+ 0.04
V
DDQ
+ 0.3
V
REF
- 0.15
V
DDQ
+ 0.3
V
DDQ
+ 0.6
2
5
Unit
V
V
V
V
V
V
V
V
3
4
1
2
Note
μ
A
μ
A
mA
mA
mA
mA
Notes: 1. V
REF
is expected to be equal to 0.5* V
DDQ
of the transmitting device, and to track variations in the DC level of the same.
Peak-to-peak noise on V
REF
may not exceed 2% of the DC value.
2. V
TT
is not applied directly to the device. V
TT
is system supply for signal termination resistors, is expected to be set equal
to V
REF
, and must track variations in the DC level of V
REF
.
3. V
ID
is the magnitude of the difference between the input level on CLK and the input level on CLK .
4. V
IN
= 0V to V
DD
, All other pins are not tested under V
IN
= 0V.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2009
Revision : 1.4
4/48
ESMT
DC Specifications
Parameter
Operation Current
(One Bank Active)
Operation Current
(One Bank Active)
Precharge Power-down
Standby Current
Idle Standby Current
Active Power-down Standby
Current
Active Standby Current
Operation Current (Read)
Operation Current (Write)
Auto Refresh Current
Self Refresh Current
Operation Current
(4 bank interleaving)
Symbol
Test Condition
t
RC
= t
RC
(min), t
CK
= t
CK
(min),
Active – Precharge
Burst Length = 2, t
RC
= t
RC
(min),
CL= 2.5, I
OUT
= 0mA,
Active-Read-Precharge
CKE
≤
V
IL
(max), t
CK
= t
CK
(min),
All banks idle
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CK
= t
CK
(min)
All banks ACT, CKE
≤
V
IL
(max),
t
CK
= t
CK
(min)
One bank; Active-Precharge,
t
RC
= t
RAS
(max), t
CK
= t
CK
(min)
Burst Length = 2, CL= 2.5 ,
t
CK
= t
CK
(min), I
OUT
= 0mA
Burst Length = 2, CL= 2.5 ,
t
CK
= t
CK
(min)
t
RC
≥
t
RFC
(min)
CKE
≤
0.2V
Burst Length = 4, t
RC
= t
RC
(min),
I
OUT
= 0mA
Version
-5
110
M13S64164A
-6
100
Unit Note
IDD0
mA
IDD1
130
110
mA
IDD2P
IDD2N
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
10
70
20
90
180
180
140
5
235
10
70
15
80
160
160
120
5
215
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
Note: 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Different Voltage, CLK and CLK inputs
Input Crossing Point Voltage, CLK and CLK inputs
Symbol
V
IH
(AC)
V
IL
(AC)
V
ID
(AC)
V
IX
(AC)
0.7
0.5*V
DDQ
-0.2
Min
V
REF
+ 0.31
V
REF
- 0.31
V
DDQ
+0.6
0.5*V
DDQ
+0.2
Max
Unit
V
V
V
V
1
2
Note
Note1. V
ID
is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(V
DD
= 2.3V~2.7V, V
DDQ
=2.3V~2.7V, T
A
= 25 °C , f = 1MHz)
Parameter
Input capacitance
(A0~A11, BA0~BA1, CKE, CS , RAS , CAS ,
WE
)
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
Symbol
C
IN1
C
IN2
C
OUT
C
IN3
Min
2.5
2.5
4.0
4.0
Max
3.5
3.5
5.5
5.5
Unit
pF
pF
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2009
Revision : 1.4
5/48
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