BLF6G10L-40BRN
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1 GHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
[1]
f
(MHz)
791 to 821
V
DS
(V)
28
P
L(AV)
(W)
2.5
G
p
(dB)
23.0
D
(%)
15.0
ACPR
(dBc)
42.5
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a
supply voltage of 28 V and an I
Dq
of 390 mA:
Average output power = 2.5 W
Power gain = 23.0 dB
Efficiency = 15.0 %
ACPR =
42.5
dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (728 MHz to 960 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Integrated current sense
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier GSM and LTE
applications in the 728 MHz to 960 MHz frequency range
BLF6G10L-40BRN
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4, 5
6, 7
Pinning
Description
drain
gate
source
sense drain
sense gate
2
6
7
3
[1]
Simplified outline
4
1
5
Graphic symbol
1
4, 5
2
3
6, 7
sym126
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF6G10L-40BRN
-
flanged ceramic package; 2 mounting holes; 6 leads
Version
SOT1112A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
V
GS(sense)
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
sense gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
0.5
-
65
-
Max
65
+11
+9
11
+150
200
Unit
V
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
T
case
= 80
C;
P
L
= 2.5 W(CW)
Typ Unit
1.7
K/W
R
th(j-case)
thermal resistance from junction to case
BLF6G10L-40BRN#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 11
BLF6G10L-40BRN
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C per section; unless otherwise specified
Symbol
V
GS(th)
I
Dq
Parameter
gate-source threshold voltage
quiescent drain current
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 59 mA
sense transistor:
I
DS
= 8.2 mA;
V
DS
= 26.5 V
main transistor:
V
DS
= 28 V
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 2.9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 2.063 A
-
8.8
-
2.7
-
10
-
4.3
1.4
-
140
-
A
A
nA
S
Min
65
1.4
340
Typ
-
1.9
390
Max Unit
-
2.4
440
V
V
mA
V
(BR)DSS
drain-source breakdown voltage
0.09 0.25 0.39
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on CCDF;
3GPP test model 1; 64 DPCH; f
1
= 788.5 MHz; f
2
= 793.5 MHz; f
3
= 818.5 MHz; f
4
= 823.5 MHz;
RF performance at V
DS
= 28 V; I
Dq(nom)
= 390 mA; T
case
= 25
C; unless otherwise specified in a
class AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
Conditions
Min
-
22
-
13
-
Typ
2.5
23.0
15
15
42.5
Max
-
-
10
-
38
Unit
W
dB
dB
%
dBc
Table 8.
Application information
Mode of operation; 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on CCDF;
3GPP test model 1; 64 DPCH; f = 821 MHz; RF performance at V
DS
= 28 V; I
Dq(nom)
= 390 mA;
T
case
= 25
C; unless otherwise specified in a class AB production test circuit.
Symbol Parameter
PAR
peak-to-average ratio
Conditions
P
L(AV)
= 10 W at 0.01 %
probability on CCDF
Min
5.5
Typ
5.9
Max
-
Unit
dB
7.1 Ruggedness in class-AB operation
The BLF6G10L-40BRN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 390 mA; P
L
= 32 W; f = 791 MHz and 821 MHz.
BLF6G10L-40BRN#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 11
BLF6G10L-40BRN
Power LDMOS transistor
7.2 Impedance information
Table 9.
Typical impedance per section
I
Dq
= 390 mA; main transistor V
DS
= 28 V
f
(MHz)
800
810
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
2.0
j5.0
2.0
j5.5
Z
L[1]
()
5.3 + j2.9
5.6 + j2.3
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Graphs
7.3.1 1 Tone CW
001aam480
001aam481
24
G
p
(dB)
23
G
p
(1)
(2)
80
η
D
(%)
60
19
RL
in
(dB)
18
(1)
η
D
22
40
17
(2)
21
20
16
20
5
15
25
35
P
L
(W)
45
0
15
5
15
25
35
P
L
(W)
45
V
DS
= 28 V; I
Dq
= 390 mA.
(1) f = 791 MHz
(2) f = 821 MHz
V
DS
= 28 V; I
Dq
= 390 mA.
(1) f = 791 MHz
(2) f = 821 MHz
Fig 2.
One-tone CW power gain and drain efficiency
as function of output power; typical values
Fig 3.
One-tone CW input return loss as function of
output power; typical values
BLF6G10L-40BRN#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 11
BLF6G10L-40BRN
Power LDMOS transistor
7.3.2 2-carrier W-CDMA (5 MHz spacing)
001aam482
(1)
(2)
001aam483
25
G
p
(dB)
24
G
p
50
η
D
(%)
40
−10
ACPR
(dBc)
−20
PAR
(1)
(2)
10
PAR
(dB)
9
23
η
D
22
30
−30
ACPR
5M
(1)
(2)
8
20
−40
7
21
10
−50
ACPR
10M
6
20
0
4
8
12
P
L
(W)
16
0
−60
5
0
4
8
12
P
L
(W)
16
3GPP; Test Model 1; 64 DPCH, PAR = 7.5 dB at
0.01 % probability per carrier; carrier spacing 5 MHz;
V
DS
= 28 V; I
Dq
= 390 mA.
(1) f = 791 MHz
(2) f = 821 MHz
3GPP; Test Model 1; 64 DPCH, PAR = 7.5 dB at
0.01 % probability per carrier; carrier spacing 5 MHz;
V
DS
= 28 V; I
Dq
= 390 mA.
(1) f = 791 MHz
(2) f = 821 MHz
Fig 4.
2-carrier W-CDMA power gain and drain
efficiency as function of output power;
typical values
Fig 5.
2-carrier W-CDMA adjacent channel power
ratio and peak aspect ratio as function of
output power; typical values
BLF6G10L-40BRN#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 11
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