BLF574
HF / VHF power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial
applications in the HF to 500 MHz band.
Table 1.
Application information
f
(MHz)
CW
225
108
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
V
DS
(V)
50
50
P
L
(W)
500
600
G
p
(dB)
26.5
27.5
D
(%)
70
73
Mode of operation
1.2 Features
Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I
Dq
of 1000 mA:
Average output power = 500 W
Power gain = 26.5 dB
Efficiency = 70 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLF574
HF / VHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
1
2
5
Graphic symbol
1
3
3
4
4
5
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF574
-
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Version
SOT539A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
110
+11
56
+150
225
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
T
case
= 80
C;
P
L
= 400 W
Typ
0.23
Unit
K/W
R
th(j-c)
is measured under RF conditions.
BLF574#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 19
BLF574
HF / VHF power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
C
iss
C
oss
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 250 mA
V
DS
= 50 V; I
D
= 500 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 12.5 A
Min Typ Max Unit
110
-
-
V
1.25 1.7
-
29
-
-
-
-
-
-
-
2.25 V
2.8
A
A
nA
S
pF
pF
pF
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.5 mA
1.35 1.85 2.35 V
37.5 -
-
17
280
-
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 8.33 A
feedback capacitance
input capacitance
output capacitance
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
0.14 -
1.5
-
204 -
72
-
Table 7.
RF characteristics
Mode of operation: CW; f = 225 MHz; RF performance at V
DS
= 50 V; I
Dq
= 1000 mA for total
device; T
case
= 25
C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
G
p
RL
in
D
power gain
input return loss
drain efficiency
Conditions
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
Min Typ Max Unit
25
13
66
26.5 28
20
70
-
-
dB
dB
%
BLF574#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 19
BLF574
HF / VHF power LDMOS transistor
500
C
oss
(pF)
400
001aaj126
300
200
100
0
0
10
20
30
40
50
V
DS
(V)
V
GS
= 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section
6.1 Ruggedness in class-AB operation
The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: V
DS
= 50 V; I
Dq
= 1000 mA;
P
L
= 400 W; f = 225 MHz.
BLF574#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 19
BLF574
HF / VHF power LDMOS transistor
7. Application information
7.1 RF performance
RF performance in a 500 W application circuit at 225 MHz.
7.1.1 1-Tone CW
001aaj127
001aaj128
30
G
p
(dB)
28
G
p
26
80
η
D
(%)
60
30
G
p
(dB)
28
(7)
(6)
(5)
η
D
40
26
(4)
(3)
(2)
(1)
24
20
24
22
0
200
400
P
L(PEP)
(W)
0
600
22
0
100
200
300
400
500
P
L
(W)
V
DS
= 50 V; I
Dq
= 1000 mA; f = 225 MHz.
V
DS
= 50 V; f = 225 MHz.
(1) I
Dq
= 400 mA
(2) I
Dq
= 600 mA
(3) I
Dq
= 800 mA
(4) I
Dq
= 1000 mA
(5) I
Dq
= 1200 mA
(6) I
Dq
= 1400 mA
(7) I
Dq
= 1800 mA
Fig 2.
Power gain and drain efficiency as functions
of load power; typical values
Fig 3.
Power gain as function of load power; typical
values
BLF574#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 19
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