BLF6G22LS-130
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L(AV)
(W)
30
G
p
(dB)
17
D
(%)
28.5
IMD3
(dBc)
37
[1]
ACPR
(dBc)
40
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I
Dq
of 1100 mA:
Average output power = 30 W
Power gain = 17 dB (typ)
Efficiency = 28.5 %
IMD3 =
37
dBc
ACPR =
40
dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22LS-130
Power LDMOS transistor
1.3 Applications
RF power amplifiers W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G22LS-130
-
Description
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
34
+150
225
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 30 W
Typ
Unit
0.43 K/W
BLF6G22LS-130#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
2 of 12
BLF6G22LS-130
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 180 mA
V
DS
= 28 V;
I
D
= 1100 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
1.6
-
26.5
-
-
-
-
Typ
-
1.9
2.1
-
34
-
12
Max
-
2.4
2.6
5
-
450
-
Unit
V
V
V
A
A
nA
S
0.085 0.135
3.15
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2122.5 MHz; f
3
= 2157.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1100 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
P
L(AV)
G
p
RL
in
D
IMD3
ACPR
average output power
power gain
input return loss
drain efficiency
third order intermodulation distortion
adjacent channel power ratio
P
L(AV)
= 30 W
P
L(AV)
= 30 W
P
L(AV)
= 30 W
P
L(AV)
= 30 W
P
L(AV)
= 30 W
Conditions
Min
-
16
-
25.5
-
-
Typ
30
17
9
28.5
37
40
Max
-
-
6
-
34.5
38
Unit
W
dB
dB
%
dBc
dBc
7.1 Ruggedness in class-AB operation
The BLF6G22LS-130 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1100 mA; P
L
= 130 W (CW); f = 2170 MHz.
BLF6G22LS-130#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
3 of 12
BLF6G22LS-130
Power LDMOS transistor
7.2 One-tone CW
19
G
p
(dB)
17
001aai093
η
D
60
η
D
(%)
40
G
p
15
20
13
0
40
80
120
P
L
(W)
0
160
V
DS
= 28 V; I
Dq
= 1100 mA; f = 2170 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as functions of load power;
typical values
BLF6G22LS-130#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
4 of 12
BLF6G22LS-130
Power LDMOS transistor
7.3 Two-tone CW
19
G
p
(dB)
G
p
17
40
001aai094
60
η
D
(%)
η
D
15
20
13
0
40
80
120
P
L
(W)
0
160
V
DS
= 28 V; I
Dq
= 1100 mA; f
1
= 2169.95 MHz; f
2
= 2170.05 MHz.
Fig 2.
0
IMD
(dBc)
−20
Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values
001aai095
0
IMD3
(dBc)
−20
001aai096
IMD3
−40
IMD5
IMD7
−40
−60
(1)
(2)
(5)
(3)
(4)
−80
0
50
100
150
200
250
P
L(PEP)
(W)
−60
0
50
100
150
200
250
P
L(PEP)
(W)
V
DS
= 28 V; I
Dq
= 1100 mA; f
1
= 2169.95 MHz;
f
2
= 2170.05 MHz.
V
DS
= 28 V; f
1
= 2169.95 MHz; f
2
= 2170.05 MHz.
(1) I
Dq
= 900 mA
(2) I
Dq
= 1000 mA
(3) I
Dq
= 1100 mA
(4) I
Dq
= 1200 mA
(5) I
Dq
= 1300 mA
Fig 3.
Intermodulation distortion as a function of
peak envelope load power; typical values
Fig 4.
Third order intermodulation distortion as a
function of peak envelope load power;
typical values
BLF6G22LS-130#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
5 of 12
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