MCL355
High-speed switching diode
Features
1. Small surface mounting type, fits onto SOD 323/SOT 23 footprints
2. High Speed
3. High reliability with high surge current handing capability
Applications
High speed switching
Absolute Maximum Ratings
T
a
=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
o
I
surge
T
j
T
stg
Limits
90
80
225
100
500
125
-55~+125
Unit
V
V
mA
mA
mA
℃
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
a
=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V
F
I
R
C
T
t
rr
Min.
-
-
-
-
Typ.
0.94
0.03
0.72
1.2
Max.
1.2
0.1
3.0
4.0
Unit
V
μA
pF
ns
Conditions
I
F
=100mA
V
R
=80V
V
R
=0.5V,f=1MHz
V
R
=6V,I
F
=10mA,R
L
=100Ω
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
1/3
MCL355
Characteristics
(Ta=25℃ unless specified otherwise)
Forward current: I
F
(mA)
Forward voltage: V
F
(V)
Reverse current: I
R
(nA)
Reverse voltage: V
R
(V)
Figure 1. Forward characteristics
Capacitance between terminals: C
T
(pF)
Figure 2. Reverse characteristics
Reverse voltage: V
R
(V)
Reverse recovery time: trr(ns)
Forward current: I
F
(mA)
Figure 3. Capacitance between terminals
characteristics
Figure 4. Reverse recovery time
characteristics
Surge current: I
surge
(A)
Pulse width: Tw (ms)
Figure 5. Surge current characteristics
Figure 6. Reverse recovery time (trr)
measurement circuit
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
2/3
微控制器 MCU
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