LITE-ON
SEMICONDUCTOR
S1M02-A SERIES
SCRs
1 AMPERES RMS
100 thru 700 VOLTS
TO-92 (TO-226AA)
(TO-226AA)
TO-92
TO-92
DIM.
A
SEATING PLANE
Sensitive Gate
Sillicon Controlled Rectifiers
Reverse Blocking Thyristors
FEATURES
Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
Blocking Voltage to 600 Volts
On– State Current Rating of 0.8 Amperes RMS at 80
℃
High Surge Current Capability — 10 Amperes
Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
Immunity to dV/dt — 20 V/msec Minimum at 110
℃
Glass-Passivated Surface for Reliability and Uniformity
Pb-Free Package
MIN.
4.45
4.32
3.18
1.15
2.42
12.7
2.04
2.93
3.43
MAX.
4.70
5.33
4.19
1.39
2.66
------
2.66
-----
-----
B
C
D
E
F
G
H
I
All Dimensions in millimeter
PIN ASSIGNMENT
1
2
3
Cathode
Gate
Anode
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
Rating
Peak Repetitive Off– State Voltage (T
J
= -40 to 110
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
S1M02100A
S1M02200A
S1M02400A
S1M02600A
S1M02700A
On-State RMS Current (T
C
=
80
℃
) 180° Conduction Angles
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz,
T
J =
25
℃
)
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(T
A
= 25
℃
, Pulse Width
≦
1.0 us)
Forward Average Gate Power (T
A
= 25
℃
, t = 8.3 ms)
Forward Peak Gate Current (T
A
= 25
℃
, Pulse Width
≦
1.0 us
)
Reverse Peak Gate Voltage (T
A
= 25
℃
, Pulse Width
≦
1.0 ms)
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
Storage Temperature Range
V
DRM
,
V
RRM
100
200
400
600
700
1.0
10
0.415
0.1
0.1
1.0
5
-40 to +110
-40 to +150
Symbol
Value
Unit
Volts
I
T(RMS)
I
TSM
It
P
GM
P
G(AV)
I
GM
V
GRM
2
Amp
Amps
As
Watt
Watt
Amp
Volts
℃
℃
2
T
J
Tstg
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for
zero or negative gate voltage; positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded
Rev.1, Jun-2005, KTXD04
RATING AND CHARACTERISTIC CURVES
S1M02-A SERIES
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds
Symbol
R
thJC
R
thJA
Value
75
150
260
Unit
℃
/W
℃
T
L
ELECTRICAL CHARACTERISTICS
(T
c
=25
℃
unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current (1)
(VD=Rated VDRM and VRRM; RGK =1K Ohms)
T
c
=25
℃
T
c
=125
℃
I
DRM
I
RRM
----
----
----
----
10
100
uA
ON CHARACTERISTICS
Peak Forward On-State Voltage @T
A
=25
℃
(I
TM=
± 1.0A Peak, Pulse Width
≦
1.0 ms, Duty Cycle
≦
1%)
Gate Trigger Current (Continuous dc) (2)
(V
AK
= 7.0 Vdc; RL = 100 Ohms)
T
C
=25
℃
V
TM
----
----
1.7
Volts
I
GT
----
40
200
uA
Holding Current (V
AK
= 7.0 V, Initiating Current = 20 mA)
T
C
=25
℃
T
C
=-40
℃
I
H
----
----
0.5
----
5.0
10
mA
Latch Current (V
AK
=7.0 V, Ig= 200 uA)
T
C
=25
℃
T
C
=-40
℃
T
C
= 25
℃
T
C
=-40
℃
I
L
----
0.6
----
0.62
-----
10
15
0.8
1.2
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 7.0 Vdc; R
L
=100 Ohms)
V
GT
----
----
Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(V
D
=Rated V
DRM
,Exponential Waveform, PGK=1K Ohms, T
J
=110
℃
Repetitive Critical Rate of Rise of On-State Current
IPK=20A,Pw=10 usec,diG/dt=1A/usex,Igt=20mA
dv/dt
20
35
----
V/us
di/dt
----
----
50
A/us
(1) R
GK
= 1000 Ohms included in measurement
(2) Does not include R
GK
in measure
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