EN29SL800
EN29SL800
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 1.8 Volt-only
FEATURES
•
Single power supply operation
- Full voltage range:1.65-2.2 volt for read and
write operations.
- Ideal for battery-powered applications.
•
High performance
- Access times as fast as 70 ns
•
Low power consumption (typical values at 5
MHz)
- 15 mA typical active read current
- 15 mA typical program/erase current
- 0.2
μA
typical standby current
•
Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and fifteen 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and fifteen 32-Kword sectors (word mode)
•
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
•
High performance program/erase speed
- Byte/Word program time: 5µs/7µs typical
- Sector erase time: 500ms typical
•
JEDEC Standard Embedded Erase and
Program Algorithms
•
JEDEC standard DATA# polling and toggle
bits feature
•
Single Sector and Chip Erase
•
Sector Unprotect Mode
•
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
•
Low Vcc write inhibit < 1.2V
•
Minimum 100K endurance cycle
•
-
-
-
-
Package Options
48-pin TSOP (Type 1)
48-ball 6mm x 8mm TFBGA
48-ball 5mm x 6mm WFBGA
48-ball 5mm x 6mm WLGA
•
Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN29SL800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 5µs. The
EN29SL800 features 1.8V voltage read and write operation, with access time as fast as 70ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29SL800 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. F, Issue Date: 2008/07/07
EN29SL800
WFBGA and WLGA
Top View, Balls Facing Down
A6
A2
A5
A1
A4
A0
A3
CE#
A2
V
SS
B6
A4
B5
A3
B4
A5
B3
DQ8
B2
OE#
B1
DQ0
C6
A6
C5
A7
C4
A18
C3
DQ10
C2
DQ9
C1
DQ1
D2
NC
D1
DQ2
E1
DQ3
F1
V
DD
G1
DQ12
H2
NC
H1
DQ13
D6
A17
D5
NC
E6
NC
F6
NC
G6
WE#
H6
NC
H5
NC
I6
A9
I5
A10
I4
A8
I3
DQ4
I2
DQ5
I1
DQ14
J6
A11
J5
A13
J4
A12
J3
DQ11
J2
DQ6
J1
DQ15
K5
A14
K4
A15
K3
A16
K2
DQ7
K1
V
SS
Notes:
1.
2.
Reset#, RY/BY#, Byte# are not available for WFBGA package.
It is organized as 512K x 16 ( 8Mbit)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. F, Issue Date: 2008/07/07
EN29SL800
TABLE 1. PIN DESCRIPTION
Pin Name
A0-A18
DQ0-DQ14
DQ15 / A-1
CE#
OE#
RESET#
RY/BY#
WE#
Vcc
Vss
NC
BYTE#
Addresses
15 Data Inputs/Outputs
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
Chip Enable
CE#
A0 - A18
DQ0 – DQ15
(A-1)
FIGURE 1. LOGIC DIAGRAM
Function
EN29SL800
Reset#
Output Enable
Hardware Reset Pin
Ready/Busy Output
Write Enable
Supply Voltage
(1.65-2.2V)
Ground
Not Connected to anything
Byte/Word Mode
OE#
WE#
Byte#
RY/BY#
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. F, Issue Date: 2008/07/07
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