LITE-ON
SEMICONDUCTOR
T1M5F-A SERIES
TRIACs
1.0 AMPERES RMS
400 thru 600 VOLTS
TO-92 (TO-226AA)
(TO-226AA)
TO-92
TO-92
DIM.
A
SEATING PLANE
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
FEATURES
One-Piece, Injection-Molded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes
(Quadrants) for all possible Combinations of Trigger
Sources, and especially for Circuits that Source Gate
Drives
All Diffused and Glassivated Junctions for Maximum
Uniformity of Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/msec
at 110
℃
)
Commutating di/dt of 1.6 Amps/msec at 110℃
High Surge Current of 12 Amps
Pb-Free Package
MIN.
4.45
4.32
3.18
1.15
2.42
12.7
2.04
2.93
3.43
MAX.
4.70
5.33
4.19
1.39
2.66
------
2.66
-----
-----
B
C
D
E
F
G
H
I
All Dimensions in millimeter
PIN ASSIGNMENT
1
2
3
Main Terminal 1
Gate
Main Terminal 2
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
Rating
Peak Repetitive Off– State Voltage (T
J
= -40 to 110
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
T1M5F400A
T1M5F600A
V
DRM
,
V
RRM
400
600
Volts
Symbol
Value
Unit
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (T
C
= 50
℃
)
Peak Non-Repetitive Surge Current
Full Cycle Sine Wave 60 Hz (Tj =25
℃
)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power ( t
≦
2.0us ,Tc = 80
℃
)
Average Gate Power (Tc = 80
℃
, t
≦
8.3 ms )
Peak Gate Current ( t
≦
2.0us ,Tc = 80
℃
)
Peak Gate Voltage ( t
≦
2.0us ,Tc = 80
℃
)
Operating Junction Temperature Range
Storage Temperature Range
I
T(RMS)
I
TSM
It
P
GM
P
G(AV)
I
GM
V
GM
2
1.0
12.0
0.60
5.0
0.1
1.0
5.0
-40 to +110
-40 to +150
Amp
Amps
As
Watt
Watt
Amp
Volts
℃
℃
2
T
J
Tstg
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV. 2, Jun-2005, KTXD11
RATING AND CHARACTERISTIC CURVES
T1M5F-A SERIES
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Lead
- Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Symbol
RthJL
RthJC
RthJA
Value
60
75
150
260
Unit
℃
/
W
℃
T
L
ELECTRICAL CHARACTERISTICS
(T
c
=25
℃
unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current
(VD=Rated VDRM and VRRM; Gate OPen)
T
j
=25
℃
T
j
=110
℃
I
DRM
I
RRM
----
----
----
----
10
100
uA
uA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(I
TM=
± 1A Peak @Tp
≦
2.0 ms, Duty Cycle
≦
2%)
V
TM
I
GT1
I
GT2
I
GT3
I
GT4
----
----
----
----
----
----
----
----
----
----
1.9
5.0
5.0
5.0
7.0
Volts
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc; R
L
= 100 Ohms)
mA
Holding Current (V
D
= 12 V, Initiating Current = ± 200 mA,
Gate Open)
Turn-On Time (V
D
= Rated VDRM , I
TM
= 1.0 A pk, I
G
= 25 mA)
I
H
----
1.5
10
mA
tgt
V
GT1
V
GT2
V
GT3
V
GT4
I
L1
I
L2
I
L3
I
L4
V
GD
----
----
----
----
----
----
----
----
----
0.1
2
0.66
0.77
0.84
0.88
1.6
10.5
1.5
2.5
----
----
2.0
2.0
2.0
2.5
15
20
15
15
----
us
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc; R
L
=100 Ohms)
Volts
Latching Current (V
D
=12V,I
G
= 10 mA)
mA
Gate Non-Trigger Voltage (V
D
= 12V, R
L
= 100 Ohms , T
J
=110
℃
)
Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(V
D
=Rated V
DRM
,Exponential Waveform, Gate Open, T
J
=110
℃
)
dv/dt
20
60
----
V/us
Repetitive Critical Rate of Rise of On-State Current
Pulse Width = 20 us, IPKmax = 15 A, diG/dt = 1 A/us, f = 60 Hz
Rate of Change of Commutating Current (V D = 400 V, I TM = .84 A,
Commutating dv/dt = 1.5 V/us, Gate Open, T J = 110° C, f = 250 Hz,
with Snubber)
di/dt
----
----
10
A/us
di/dt(c)
1.6
----
----
A/ms
RATING AND CHARACTERISTIC CURVES
T1M5F-A SERIES
110
110
a = 30°
a = 30°
Ta,AMBIENT TEMPERATURE(
℃
)
100
100
Tc,CASE TEMPERATURE(
℃
)
90
60°
DC
90°
60°
90
90°
DC
80
70
80
70
60
180°
180°
60
120°
50
40
30
20
0.00
120°
50
40
30
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
IT(RMS),RMS ON-STATE CURRENT(AMPS)
IT(RMS),RMS ON-STATE CURRENT(AMPS)
Figure 1. RMS Current Derating
Figure 2. RMS Current Derating
1.2
DC
Ta,AMBIENT TEMPERATURE(
℃
)
1.0
180°
0.8
120°
0.6
90°
0.4
60°
0.2
a = 30°
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IT(RMS),RMS ON-STATE CURRENT(AMPS)
Figure 3. Power Dissipation
RATING AND CHARACTERISTIC CURVES
T1M5F-A SERIES
16
I
TSM
, PEAK SURGE CURRENT (AMPS)
12
8
4
T
J
=25
℃
f= 60MHz
0
1
10
100
NUMBER OF CYCLES
Figure 6. Maximum Allowable Surge Current
◎
Specifications mentioned in this publication are subject to change without notice.
详细参数
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