SPN5001
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN5001 is the N-Channel logic enhancement
mode power field effect transistor which is produced
with high voltage BiCMOS technology. This device is
particularly suited for reducing the no load
consumption in PC power, TV power and Adapter.
APPLICATIONS
Desk PC Power Supply
AC adapter
LCD TC Power Supply
FEATURES
600V/27mA , R
DS(ON)
= 300Ω@V
GS
=10V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION(SOT-23)
PART MARKING
501YW
YW: Date Code
2012/01/12
Ver.1
Page 1
SPN5001
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPN5001S23RGB
Package
SOT-23
Part
Marking
501YW
※
SPN5001S23RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage - Continuous
Continuous Drain Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=25℃
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
T
STG
R
θJA
Typical
600
±20
27
0.5
-55 ~ 150
-55 ~ 150
250
Unit
V
V
mA
W
℃
℃
℃
/W
2012/01/12
Ver.1
Page 2
SPN5001
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 300 V, I
D
= 10m A
R
G
= 3.3Ω V
GS
= 10.0 V
R
D
= 30kΩ
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
8.8
7
5
V
DD
= 200 V, I
D
= 0.1 A,
V
GS
= 10 V
1.8
2.5
1.3
0.8
12.5
10
7
11.5
14.5
14
120
ns
16.2
13
9
pF
3.2
nC
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
R
DS(on)
Gfs(1)
V
DS
=0V,V
GS
=±20V
V
DS
=480V,V
GS
=0V
T
J
=25℃
V
GS
=10V,I
D
=16mA
V
DS
= 10 V, I
D
=16mA
600
3.0
4.5
±100
25
300
28
V
nA
uA
Ω
mS
Symbol
Conditions
Min.
Typ
Max.
Unit
2012/01/12
Ver.1
Page 3
SPN5001
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2012/01/12
Ver.1
Page 4
SPN5001
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2012/01/12
Ver.1
Page 5
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