UF1000F thru UF1008F
Isolation Glass Passivated High Efficient Rectifiers
Reverse Voltage 50 to 800 Volts Forward Current 10.0 Amperes
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O utilizing Flame Retardant Epoxy Molding
Compound.
Exceeds environmental standards of MIL-S-19500/228
Low power loss, high efficiency
Low forwrd voltge, high current capability
High surge capacity
Ultra fast recovery time, high voltage
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
ITO-220AC
Mechanical Data
Case: ITO-220AC full molded plastic package
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
Maximum Ratings and Electrical Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz,
resistive or inductive load. For capacitive load, derate current by 20%
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100
o
C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 10.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A (Note 1)
Typical junction capacitance at 4.0V, 1MHz (Note 2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature range
Notes:
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JC
T
J
, T
STG
UF1000F
50
35
50
UF1001F
100
70
100
UF1002F
200
140
200
UF1003F
300
210
300
10.0
150.0
UF1004F
400
280
400
UF1006F
600
420
600
UF1008F
800
560
800
Unit
Volts
Volts
Volts
Amps
Amps
1.0
10.0
500
50
80.0
2.0
1.3
1.7
Volts
uA
@T
A
=25
o
C
@T
A
=125
o
C
100
50.0
o
nS
pF
C/W
o
-55 to +150
C
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
3. Thermal resistance from Junction to case.
4. Both Bonding and Chip structure are available.
191
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
