SMD LED
Product Data Sheet
LTST-C930TBKT
Spec No.: DS22-2000-188
Effective Date: 06/22/2010
Revision: H
LITE-ON DCC
RELEASE
BNS-OD-FC001/A4
LITE-ON Technology Corp. / Optoelectronics
No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660
http://www.liteon.com/opto
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Features
* Meet ROHS, Green Product.
* Dome lens Chip LED.
* Package in 8mm tape on 7" diameter reels.
* Compatible with automatic placement equipment.
* Compatible with infrared and vapor phase reflow solder process.
* EIA STD package.
* I.C. compatible.
Package
Dimensions
Part No.
LTST-C930TBKT
Notes:
1. All dimensions are in millimeters (inches).
Lens
Water Clear
Source Color
InGaN Blue
2. Tolerance is ± 0.10 mm (.004") unless otherwise noted.
Part
No. : LTST-C930TBKT
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Absolute
Maximum
Ratings
At
Ta=25
℃
LTST-C930TBKT
76
Parameter
Power Dissipation
Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
DC Forward Current
Derating Linear From 25°C
Reverse Voltage
Note A
Operating Temperature Range
Storage Temperature Range
Infrared Soldering Condition
Note A: Reverse Voltage can’t be continued operating
Unit
mW
100
mA
20
0.25
5
-20°C to + 80°C
-30°C to + 100°C
260°C For 5 Seconds
mA
mA/°C
V
Part
No. : LTST-C930TBKT
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Suggestion Profile:
(1) Suggestion IR Reflow Profile For Normal Process
(2) Suggestion IR Reflow Profile For Pb Free Process
R e c o m m e n d e d P r o file B e t w e e n A s s e m b le A n d H e a t -R e s is t a n c e L in e
T h e P r o file is a v a ila b le t h a t m u s t t o u s e S n A g
Cu
s o ld e r p a s t e
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Electrical
Optical
Characteristics
Symbol
At
Ta=25
℃
Min.
Typ.
Max.
Unit
Test Condition
IF = 20mA
Note 1
Parameter
Part No.
LTST-
Luminous Intensity
IV
C930TBKT
180.0
450.0
mcd
Viewing Angle
2θ1/2
C930TBKT
25
deg
Note 2 (Fig.6)
Peak Emission Wavelength
λP
C930TBKT
468
nm
Measurement
@Peak (Fig.1)
IF = 20mA
Note 3
Dominant Wavelength
λd
C930TBKT
465.0
-
475.0
nm
Spectral Line Half-Width
Δλ
C930TBKT
25
nm
Forward Voltage
VF
C930TBKT
3.4
3.8
V
IF = 20mA
Reverse Current
IR
C930TBKT
10
μA
VR = 5V
Capacitance
C
C930TBKT
40
PF
VF = 0
f = 1MHZ
Notes: 1. Luminous intensity is measured with a light sensor and filter combination that approximates the
CIE eye-response curve.
2.
θ1/2
is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
3. The dominant wavelength,
λ
d is derived from the CIE chromaticity diagram and represents the
single wavelength which defines the color of the device.
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BNS-OD-C131/A4
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