SPP6507
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP6507 is the Dual P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
P-Channel
-30V/-2.8A,R
DS(ON)
=105mΩ@V
GS
=- 10V
-30V/-2.5A,R
DS(ON)
=115mΩ@V
GS
=-4.5V
-30V/-1.5A,R
DS(ON)
=150mΩ@V
GS
=-2.5V
-30V/-1.0A,R
DS(ON)
=215mΩ@V
GS
=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-6L package design
PIN CONFIGURATION( SOT-23-6L )
PART MARKING
2008/02/15
Ver.2
Page 1
SPP6507
Dual P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
G1
S2
G2
D2
S1
D1
Description
Gate 1
Source 2
Gate 2
Drain 2
Source 1
Drain1
ORDERING INFORMATION
Part Number
SPP6507S26RG
SPP6507S26RGB
Package
SOT-23- 6L
SOT-23- 6L
Part
Marking
07YW
07YW
※
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※
SPP6507S26RG : Tape Reel ; Pb – Free
※
SPP6507S26RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
≤
10sec
Steady State
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
-30
±12
-2.8
-2.1
-8
-1.4
1.15
0.75
Unit
V
V
A
A
A
W
℃
℃
-55/150
-55/150
52
100
℃/W
2008/02/15
Ver.2
Page 2
SPP6507
Dual P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=-10uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±20V
V
DS
=-24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
T
J
=55℃
V
DS
= -5V,V
GS
=-4.5V
V
GS
=-10V,I
D
=-2.8A
V
GS
=-4.5V,I
D
=-2.5A
V
GS
=-2.5V,I
D
=-1.5A
V
GS
=-1.8V,I
D
=-1.0A
V
DS
=-10V,I
D
=-2.8A
I
S
=-1.2A,V
GS
=0V
-30
-0.4
-1.0
±100
-1
-10
-4
0.085
0.100
0.135
0.185
4.0
-0.8
0.105
0.115
0.150
0.215
-1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=-15V ,V
GS
=-4.5V
I
D
≡-2.0A
5.8
0.8
1.5
380
55
40
6
pF
nC
V
DS
=-15V ,V
GS
=0V
f=1MHz
V
DD
=-15V ,R
L
=15Ω
I
D
≡-1.0A
,V
GEN
=-10V
R
G
=3Ω
3.9
40
15
ns
2008/02/15
Ver.2
Page 3
SPP6507
Dual P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/02/15
Ver.2
Page 4
SPP6507
Dual P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/02/15
Ver.2
Page 5