Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (Abs) (ID) | 14 A |
| 最大漏极电流 (ID) | 14 A |
| 最大漏源导通电阻 | 0.2 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-257AA |
| JESD-30 代码 | R-MSFM-P3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | METAL |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 50 W |
| 最大脉冲漏极电流 (IDM) | 56 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| OM6001ST | OM6003ST | OM6004ST | OM6002ST | |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 400 V | 500 V | 200 V |
| 最大漏极电流 (Abs) (ID) | 14 A | 5.5 A | 4.5 A | 9 A |
| 最大漏极电流 (ID) | 14 A | 5.5 A | 4.5 A | 9 A |
| 最大漏源导通电阻 | 0.2 Ω | 1.05 Ω | 1.6 Ω | 0.44 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-257AA | TO-257AA | TO-257AA | TO-257AA |
| JESD-30 代码 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 50 W | 50 W | 50 W | 50 W |
| 最大脉冲漏极电流 (IDM) | 56 A | 22 A | 18 A | 36 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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