Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Zetex Semiconductors |
| 包装说明 | IN-LINE, R-PSIP-W3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 45 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 200 |
| JESD-30 代码 | R-PSIP-W3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | 235 |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.3 W |
| 认证状态 | Not Qualified |
| 参考标准 | CECC |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| VCEsat-Max | 0.25 V |
| Base Number Matches | 1 |
| BC414P | C4L200S | BC550P | BC413P | BC109P | |
|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 | METER MAIN RING T-200A 4 SPACE QO INT | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 | Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 |
| 是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Zetex Semiconductors | - | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
| 包装说明 | IN-LINE, R-PSIP-W3 | - | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 |
| Reach Compliance Code | unknown | - | unknown | unknown | unknown |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | - | LOW NOISE | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.1 A | - | 0.2 A | 0.1 A | 0.05 A |
| 集电极-发射极最大电压 | 45 V | - | 45 V | 30 V | 20 V |
| 配置 | SINGLE | - | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 200 | - | 200 | 200 | 180 |
| JESD-30 代码 | R-PSIP-W3 | - | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 |
| JESD-609代码 | e0 | - | e0 | e0 | e0 |
| 元件数量 | 1 | - | 1 | 1 | 1 |
| 端子数量 | 3 | - | 3 | 3 | 3 |
| 最高工作温度 | 200 °C | - | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | - | IN-LINE | IN-LINE | IN-LINE |
| 峰值回流温度（摄氏度） | 235 | - | 235 | 235 | 235 |
| 极性/信道类型 | NPN | - | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 0.3 W | - | 0.5 W | 0.3 W | 0.3 W |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 参考标准 | CECC | - | CECC | CECC | CECC |
| 表面贴装 | NO | - | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE | - | WIRE | WIRE | WIRE |
| 端子位置 | SINGLE | - | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | - | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 250 MHz | - | 300 MHz | 250 MHz | 300 MHz |
| VCEsat-Max | 0.25 V | - | 0.25 V | 0.25 V | 0.2 V |
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