CMT2301
P-C
HANNEL
E
NHANCEMENT
M
ODE
M
OSFET
GENERAL DESCRIPTION
The CMT2301 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to minimize
on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook computer
power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline
surface mount package.
FEATURES
-20V/-2.3A ,R
DS(ON)
=130 mΩ@VGS=-4.5V
-20V/-1.9A ,R
DS(ON)
=190 mΩ@VGS=-2.5V
Super high density cell design for extremely low R
DS(ON)
Exceptional on-resistance and maximum DC current
capability
SOT-23-3 package design
APPLICATIONS
Power Management in Notebook
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION
SOT-23-3
SYMBOL
D
Top View
3
G
DRAIN
SOURCE
GATE
S
1
2
P-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT2301M233
CMT2301GM233*
*Note:
G : Suffix for Pb Free Product
Package
SOT-23-3
SOT-23-3
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 1
CMT2301
P-C
HANNEL
E
NHANCEMENT
M
ODE
M
OSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain- to- Source Voltage
Gate-to-Source Voltage
Continuous Drain Current(T
J
=150℃)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Value
-20
±8
-2.5
-1.5
-10
-1.6
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
℃
℃
℃/W
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT2301
Characteristic
Static
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= -250μA)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= -250μA)
Gate Leakage Current
(V
DS
=0 V, V
GS
=
±
8 V)
Zero Gate Voltage Drain Current
(V
DS
= -20 V, V
GS
= 0 V)
(V
DS
= -20 V, V
GS
= 0 V, T
J
= 55℃)
On-State Drain Current
(V
DS
≤
-5 V, V
GS
= -4.5V)
I
D(on)
-6
-3
R
DS(on)
g
FS
V
SD
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
tf
Q
g
Q
gs
Q
gd
0.105
0.145
6.5
-0.8
415
223
87
13
36
42
34
5.8
0.85
1.7
25
60
70
60
10
nC
ns
pF
-1.2
0.13
0.19
I
DSS
-1
-10
A
μA
V
(BR)DSS
V
GS(th)
I
GSS
-20
-0.45
-1.5
V
V
nA
Symbol
Min
Typ
Max
Units
±
100
(V
DS
≤
-5 V, V
GS
= -2.5V)
Drain-Source On-Resistance
(V
GS
= -4.5 V, I
D
= -2.8A)
(V
GS
= -2.5 V, I
D
= -2.0A)
Forward Transconductance (V
DS
= -5 V, I
D
= -2.8V)
Diode Forward Voltage (I
S
=-1.6A,V
GS
=0V)
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
= -6 V, V
GS
=-0V,
f = 1.0 MHz)
(V
DD
= -6 V,R
L
=6Ω
I
D
= -1.0 A,V
GEN
= -4.5 V,
R
G
= 6Ω)
(V
DS
= -6 V, I
D
= -2.8 A,
V
GS
=-4.5V)
Ω
S
V
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 2
CMT2301
P-C
HANNEL
E
NHANCEMENT
M
ODE
M
OSFET
TYPICAL
CHARACTERISTICS
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 3
CMT2301
P-C
HANNEL
E
NHANCEMENT
M
ODE
M
OSFET
TYPICAL
CHARACTERISTICS
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 4
CMT2301
P-C
HANNEL
E
NHANCEMENT
M
ODE
M
OSFET
TYPICAL
CHARACTERISTICS
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 5
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