CMT60N03G
N-C
HANNEL
Logic Level Power M
OSFET
APPLICATION
Buck Converter High Side Switch
Other Applications
V
DSS
30V
R
DS(ON)
Typ.
10.8mΩ
I
D
50A
FEATURES
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Improved UIS Ruggedness
PIN CONFIGURATION
TO-252
TO-263
SYMBOL
D
Front View
Front View
D
SOURCE
DRAIN
GATE
G
1
2
3
S
G
1
2
3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current
－
Continuous Tc = 25℃, V
GS
@10V (Note 2)
－
Continuous Tc = 100℃, V
GS
@10V (Note 2)
－
Pulsed Tc = 25℃, V
GS
@10V (Note 3)
Gate-to-Source Voltage
－
Continue
Total Power Dissipation
Derating Factor above 25℃
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=1.1mH,I
D
=30 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
dv/dt
T
J
, T
STG
E
AS
T
L
T
PKG
I
AS
Symbol
V
DSS
I
D
I
D
I
DM
V
GS
P
D
Value
30
50
Fig.3
Fig.6
±20
52
0.5
3.0
-55 to 150
500
300
260
Fig.8
V
W
W/℃
V/ns
℃
mJ
℃
℃
Unit
V
A
THERMAL RESISTANCE
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Junction-to-case
Junction-to-ambient
(PCB Mount)
Junction-to-ambient
Min
Typ
Max
2.4
50
62
Units
℃/W
℃/W
℃/W
Test Conditions
Water cooled heatsink, P
D
adjusted for a peak junction
temperature of +150℃
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 1
CMT60N03G
N-C
HANNEL
Logic Level Power M
OSFET
ORDERING INFORMATION
Part Number
CMT60N03GN252
CMT60N03GN263
Package
TO-252
TO-263
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
CMT60N03G
Characteristic
OFF Characteristics
Drain-to-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Breakdown Voltage Temperature Coefficient, Fig.11
(Reference to 25
℃,
I
D
= 250
μA)
Drain-to-Source Leakage Current
(V
DS
= 24 V, V
GS
= 0 V, T
J
= 25℃)
(V
DS
= 24 V, V
GS
= 0 V, T
J
= 125℃)
Gate-to-Source Forward Leakage
(V
GS
= 20 V)
Gate-to-Source Reverse Leakage
(V
GS
= -20 V)
ON Characteristics
Gate Threshold Voltage,Fig.12
(V
DS
= V
GS
, I
D
= 250
μA)
Static Drain-to-Source On-Resistance, Fig.9,10
(V
GS
= 10 V, I
D
= 15A)
(V
GS
= 4.5 V, I
D
= 12A)
Forward Transconductance (V
DS
= 15 V, I
D
= 12A)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 10 V)
Total Gate Charge (V
GS
= 4.5 V)
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current (Body
Diode Fig.16)
Pulse Source Current (Body Diode)
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Charge
(I
S
= 12 A, V
GS
= 0 V)
(I
F
= 12 A, V
GS
= 0 V,
d
i
/d
t
= 100A/μs)
Integral pn-diode in MOSFET
I
SM
V
SD
t
rr
Q
rr
25
31
Fig.6
1.0
38
46
A
V
ns
nC
(V
DS
= 15 V, I
D
= 12 A) (Note 6)
Fig.15
(Note 5)
Dynamic Characteristics
(V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz)
Fig.14
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
Resistive Switching Characteristics
(V
DD
= 15 V, I
D
= 12 A,
V
GS
= 10 V,
R
G
= 1.0Ω) (Note 6)
(V
DD
= 15 V, I
D
= 12 A,
V
GS
= 4.5V,
R
G
= 1.0Ω) (Note 6)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
10
3.4
36
6.0
16
7.2
34
14
50
ns
ns
ns
ns
ns
ns
ns
ns
A
1520
314
152
27.9
14
4.9
4.3
35
19
pF
pF
pF
nC
nC
nC
nC
g
FS
(Note 5)
R
DS(on)
10.8
15.4
28
S
12.5
mΩ
V
GS(th)
1.0
3.0
V
I
GSS
-100
nA
I
GSS
I
DSS
1
10
100
nA
μA
ΔV
DSS
/ΔT
J
27
mV/
℃
V
DSS
30
V
Symbol
Min
Typ
Max
Units
Source-Drain Diode Characteristics
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 2
CMT60N03G
N-C
HANNEL
Logic Level Power M
OSFET
Note 1: T
J
= +25℃ to 150℃
Note 2: Current is calculated based upon maximum allowable junction temperature.
Package current limitation is 30A.
Note 3: Repetitive rating; pulse width limited by maximum junction temperature.
Note 4: I
SD
= 12.0A, di/dt
≤100A/μs,
V
DD
≤
BV
DSS
, T
J
= +150℃
Note 5: Pulse width
≤
250μs; duty cycle
≤
2%
Note 6: Essentially independent of operating temerpature.
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 3
CMT60N03G
N-C
HANNEL
Logic Level Power M
OSFET
PACKAGE DIMENSION
TO-252
B
R
C
E
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
V
4
1
2
3
K
S
A
U
L
G
J
H
D
TO-263
B
C
E
V
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
1
2
3
S
K
G
J
D
H
2006/10/11 Rev1.2
Champion Microelectronic Corporation
A
Page 4
CMT60N03G
N-C
HANNEL
Logic Level Power M
OSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
Sales & Marketing
7F-6, No.32, Sec. 1, Chenggong Rd.,
Nangang District, Taipei City 115, Taiwan
T E L : +886-2-2788 0558
F A X : +886-2-2788 2985
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 5
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
