BLF8G24LS-150V;
BLF8G24LS-150GV
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
150 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2300 to 2400
I
Dq
(mA)
1300
V
DS
(V)
28
P
L(AV)
(W)
45
G
p
(dB)
19
D
(%)
33
ACPR
5M
(dBc)
30
[1]
3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (70 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Design optimized for gull-wing
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
BLF8G24LS-150(G)V
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
1
2
3
4
5
6
7
[1]
Pinning
Simplified outline
Graphic symbol
Description
drain
gate
source
decoupling lead
decoupling lead
n.c.
n.c.
drain
gate
source
decoupling lead
decoupling lead
n.c.
n.c.
Connected to flange.
[1]
[1]
BLF8G24LS-150V (SOT1244B)
4
1
5
6,7
2
1
4,5
3
3
aaa-003619
6
2
7
BLF8G24LS-150GV (SOT1244C)
4
1
5
1
6,7
2
3
aaa-003619
4,5
6
2
3
7
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G24LS-150V
-
earless flanged ceramic package; 6 leads
earless flanged ceramic package; 6 leads
BLF8G24LS-150GV -
Version
SOT1244B
SOT1244C
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
T
case
= 80
C;
P
L
= 45 W
Typ
0.30
Unit
K/W
thermal resistance from junction to case
Symbol Parameter
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 2.16 mA
V
DS
= 10 V; I
D
= 216 mA
V
DS
= 28 V; I
D
= 1300 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10.8 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.56 A
Min Typ
65
1.5
1.6
-
-
-
-
-
-
1.9
2
-
40
-
16
Max Unit
-
2.3
2.4
4.5
-
450
-
V
V
V
A
A
nA
S
0.06 -
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability
on the CCDF, carrier spacing 5 MHz; f
1
= 2302.5 MHz; f
2
= 2307.5 MHz; f
3
= 2392.5 MHz;
f
4
= 2397.5 MHz; RF performance at V
DS
= 28 V; I
Dq
= 1300 mA; T
case
= 25
C; unless otherwise
specified; in a class-AB production test circuit.
Symbol
G
p
RL
in
D
ACPR
5M
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 45 W
P
L(AV)
= 45 W
P
L(AV)
= 45 W
P
L(AV)
= 45 W
Min
17.5
-
29
-
Typ
19
10
33
30
Max
-
7
-
27
Unit
dB
dB
%
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G24LS-150V and BLF8G24LS-150GV are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 1300 mA; P
L
= 150 W (CW); f = 2300 MHz.
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data; I
Dq
= 1300 mA; V
DS
= 28 V.
f
(MHz)
BLF8G24LS-150V
2300
2400
2500
BLF8G24LS-150GV
2300
2400
2500
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S
[1]
()
1.25
j4.11
2.34
j5.50
5.65
j6.35
1.29
j5.78
2.15
j7.09
6.61
j7.57
Z
L[1]
()
2.95
j1.20
2.88
j1.31
2.80
j1.35
3.13
j3.26
2.78
j3.44
2.98
j3.66
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLF8G24LS-150V_8G24LS-150GV#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 16
BLF8G24LS-150(G)V
Power LDMOS transistor
7.3 VBW in a class-AB operation
The BLF8G24LS-150V shows 70 MHz (typical) video bandwidth (IMD third-order
intermodulation inflection point) in a class-AB test circuit in the 2.3 GHz to 2.4 GHz band
at V
DS
= 28 V and I
Dq
= 1.3 A.
aaa-010632
-10
IMD
(dBc)
-20
IMD3
-30
IMD5
-40
IMD7
(1)
(2)
(1)
(2)
(1)
(2)
-50
-60
-70
1
10
carrier spacing (MHz)
10
2
V
DS
= 28 V; I
Dq
= 1300 mA; f
c
= 2350 MHz.
(1) low
(2) high
Fig 2.
VBW capacity in class-AB test circuit
7.4 Test circuit
50 mm
50 mm
C8
C3
C2
R1
C4
C14
T1
C1
C9
C5
C6
C7
60 mm
C13
C12
C11
C10
aaa-010634
Printed-Circuit Board (PCB): Rogers 4350B with a thickness of 0.76 mm. See
Table 9
for a list of
components.
Fig 3.
BLF8G24LS-150V_8G24LS-150GV#4
Component layout
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 16
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