BZX55C Series
Zener diode
Features
1.High reliability
Voltage Range
2.4 to 75 Volts
DO-35
Applications
Voltage stabilization
1.02(26.0)
MIN
.079(2.0)
MAX
.165(4.2)
MAX
Construction
Silicon epitaxial planer
Absoluto Maximum Ratings
0
Tj=25 C
.020(.52)
TYP
1.02(26.0)
MIN
Dimensions in inches and (millimeters)
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
I=4mm T
L
*25
0
C
Type
Symbol
P
D
l
z
Tj
Tstg
Value
500
P
D
/V
z
175
-65~+175
Unit
mW
mA
0
C
0
C
Maximum Thermal Resistance
Tj=25
0
C
Parameter
Junction ambient
Test Condltions
I=4mm T
L
=constant
Symbol
R
thJA
Value
500
Unit
K/W
Electrcal Characteristics
Tj=25
0
C
Parameter
Forward voltage
Test Conditions
l
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Type
BZX55C
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Vznom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
lzt for Vzr and
mA
V
5
2.28~2.56
5
2.5~2.9
5
2.8~3.2
5
3.1~3.5
5
3.4~3.8
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
3.7~4.1
4.0~4.6
4.4~5.0
4.8~5.4
5.2~6.0
5.8~6.6
6.4~7.2
7.0~7.9
7.7~8.7
8.5~9.6
9.4~10.6
10.4~11.6
11.4~12.7
12.4~14.1
13.8~15.6
15.3~17.1
16.8~19.1
18.8~21.2
20.8~23.3
22.8~25.6
25.1~28.9
28~32
31~35
34~38
37~41
40~46
44~50
48~54
52~60
58~66
64~72
70~79
r
*
<85
<85
<85
<85
<85
<85
<75
<60
<35
<25
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<55
<80
<80
<80
<80
<80
<90
<90
<110
<125
<135
<150
<200
<250
r
zk
at
*
<600
<600
<600
<600
<600
<600
<600
<600
<550
<450
<200
<150
<50
<50
<50
<70
<70
<90
<110
<110
<170
<170
<220
<220
<220
<220
<220
<220
<220
<500
<600
<700
<700
<1000
<1000
<1000
<1500
l
zk
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
l
R
at
uA
<50
<10
<4
<2
<2
<2
<1
<0.5
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
V
R
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TKvz
%/k
-0.09~-0.06
-0.09~-0.06
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.06~-0.03
-0.05~+0.02
-0.02~+0.02
-0.05~+0.05
0.03~0.06
0.03~0.07
0.03~0.07
0.03~0.08
0.03~0.09
0.03~0.1
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
1)Tighter tolerances available request:
BZX55A...
*
1% of Vz
nom
BZ55B...
*
2% of Vz
nom
2)at T
j
=150
0
C
BZX55C Series
Characteristics (Tj=25
0
C unless otherwise specified)
600
1000
500
Ptot-Total Dissipation (mW)
*Vz-Voltage
Change (mV)
Tj=25 C
o
400
100
300
Iz=5mA
200
10
100
0
0
40
80
120
160
0
1
200
0
5
10
15
20
25
Tamb-Ambient Temperature Temperature ( C)
Figure 1.Total Power Dissipation vs.
Ambient Temperature
1.3
Vzm=Vz/Vz(25 C)
0
Vz-Z-Voltage (V)
Figure 2. Typical Change of Working Voltage
under Operating Conditions at Tamb=25-C
15
1.2
Vzm-Relative Voltage Change
TKvz=10x10 /K
8x10 /K
-4
-4
-4
TKvz-Temperature Coefficient of Vz(10 /K)
10
1.1
6x10 /K
4x10 /K
2x10 /K
-4
-4
-4
5
Iz=5mA
1.0
0
-2x10 /K
-4x10 /K
-4
-4
0
0.9
0.8
-60
0
60
120
180
0
-5
240
0
10
20
30
40
50
Tj-Junction Temperature Temperature ( C)
Figure 3.Typical of Working Voltage vs.
Junction Temperature
Vz-Z-Voltage (V)
Figure 4. Temperature Conefficient of Vz vs.
Z-Volltage
200
150
C
D
-Diode Capacitance (pF)
V
R
=2V
0
Tj=25 C
100
50
0
0
5
10
15
20
25
Vz-Z-Voltage (V)
Figure 5.Diode Capacitance vs.Z-Voltage
BZX55C Series
100
100
10
Tj=25 C
0
80
Current (mA)
1
Iz-Z-current (mA)
0
0.2
0.4
0.6
0.8
1.0
60
0.1
IF
-Forward
40
0.01
20
0.001
0
0
5
8
12
Vz-Z-Voltage (V)
Figure 7. Z-Current vs. Z-Voltage
1000
16
20
V
F
-Forward Voltage (V)
Figure 6. Forward Current vs.Forward Voltage
50
Iz=1mA
40
Vzm-Relative Voltage Change
Ptot=500mW
0
Tamb=25 C
100
30
rz-Differentical Z-Resistance (*)
5mA
10mA
20
10
10
1
0
15
20
25
Vz- Z- Voltage (V)
30
35
0
5
10
15
20
25
Vz-Z-Voltage (V)
Figure 9. Differential Z-Resistance vs. Z-Volltage
Figure 8.Z-Current vs.Z-Voltage
1000
tp/T=0.5
100
tp/T=0.2
Single Pulse
C
D
-Diode Capacitance (pF)
RthJA=300K/W
*T=Tjmax-Tamb
10
tp/T=0.1
tp/T=0.05
tp/T=0.02
tp/T=0.01
i
ZM
=(-Vz+(Vz
2
+4rzj x*T/Zthp)1/2)/(2rzj)
1
10
-1
10
0
10
tp- Pulse Length (ms)
1
10
2
Figure 10. Thermal Response
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