BLS7G3135L-350P;
BLS7G3135LS-350P
LDMOS S-band radar power transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 200 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
(GHz)
3.1
3.3
3.5
V
DS
(V)
32
32
32
P
L
(W)
350
350
350
G
p
(dB)
12
12
10
D
(%)
43
43
39
t
r
(ns)
5
5
5
t
f
(ns)
5
5
5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3.1 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
BLS7G3135L(S)-350P
LDMOS S-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLS7G3135L-350P (SOT539A)
1
2
5
1
3
3
4
5
4
2
sym117
BLS7G3135LS-350P (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLS73135L-350P
BLS73135LS-350P
-
-
Description
flanged balanced ceramic package; 2 mounting holes;
4 leads
earless flanged balanced ceramic package; 4 leads
Version
SOT539A
SOT539B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
[1]
Min
-
0.5
65
-
Max
65
+11
+150
225
Unit
V
V
C
C
Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF
calculator.
BLS7G3135L-350P_7G3135LS-350P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 13
BLS7G3135L(S)-350P
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5.
Z
th(j-mb)
Thermal characteristics
Conditions
Typ
0.1
0.09
0.07
0.09
Unit
K/W
K/W
K/W
K/W
transient thermal impedance from junction to T
case
= 85
C;
P
L
= 350 W
mounting base
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
Symbol Parameter
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 2.2 mA
V
DS
= 10 V; I
D
= 220 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 11 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.7 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
39
-
16.2
0.065
Max
-
2.3
2.8
-
280
-
-
Unit
V
V
A
A
nA
S
BLS7G3135L-350P_7G3135LS-350P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 13
BLS7G3135L(S)-350P
LDMOS S-band radar power transistor
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 200 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production circuit.
Symbol
G
p
RL
in
D
P
droop(pulse)
t
r
t
f
G
p
RL
in
D
P
droop(pulse)
t
r
t
f
G
p
RL
in
D
P
droop(pulse)
t
r
t
f
Parameter
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
Conditions
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 350 W
P
L
= 320 W
P
L
= 320 W
P
L
= 320 W
P
L
= 320 W
P
L
= 320 W
P
L
= 320 W
Min
10.5
-
38
-
-
-
10.5
-
38
-
-
-
8.5
-
35
-
-
-
Typ
12
6
43
0.2
5
5
12
6
43
0.2
5
5
10
9
39
0.2
5
5
Max
-
-
-
0.3
50
50
-
-
-
0.3
50
50
-
-
-
0.3
50
50
Unit
dB
dB
%
dB
ns
ns
dB
dB
%
dB
ns
ns
dB
dB
%
dB
ns
ns
At frequency of 3.1 GHz
At frequency of 3.3 GHz
At frequency of 3.5 GHz
7. Application information
7.1 Ruggedness in class-AB operation
The BLS7G3135L-350P and the BLS7G3135LS-350P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 32 V; I
Dq
= 200 mA; P
L
= 350 W; t
p
= 300
s;
= 10 %
BLS7G3135L-350P_7G3135LS-350P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 13
BLS7G3135L(S)-350P
LDMOS S-band radar power transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data. Typical values unless otherwise specified.
f
(GHz)
3.1
3.2
3.3
3.4
3.5
[1]
Z
S[1]
()
1.8
7.2j
1.6
7.1j
2.2
8.2j
3.1
9.7j
3.6
11.6j
Impedances are taken at a single half of the push-pull transistor.
Z
L[1]
()
3.6
6.3j
4.4
6.7j
4.8
5.8j
5.7
6.2j
6.5
4.6j
drain 1
gate 1
Z
S
gate 2
drain 2
001aak544
Z
L
Fig 1.
Definition of transistor impedance
7.3 Test circuit information
40 mm
40 mm
R1
C3
C4 C6
C13
C8 C10
C1
C11
58 mm
C9 C12
C2
R2
C5 C7
C14
aaa-007977
Printed-Circuit Board (PCB): Rogers 3006;
r
= 6.15; thickness = 0.64 mm;
thickness copper plating = 35
m
See
Table 9
for a list of components.
Fig 2.
Test circuit layout
BLS7G3135L-350P_7G3135LS-350P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 13
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