2SD886
Plastic-Encapsulate Transistors
Features
Power dissipation
P
CM:
1
W (Tamb=25℃)
NPN
TO—126
Collector current
I
CM:
3
A
Collector-base voltage
50
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
V
CE
=
2
V, I
C
=
1
A
I
C
=
2
A, I
B
=
200
mA
I
C
=
2
A, I
B
=
200
mA
V
CE
=5V, I
C
=
100
mA
V
CB
=
10
V, I
E
=0, f=
1
MHz
1. EMITTER 2. COLLECTOR 3. BASE
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
100
µA, I
E
=0
Ic=
5
mA, I
B
=0
I
E
=
100
µA, I
C
=0
V
CB
=
50
V, I
E
=0
V
EB
=
3
V, I
C
=0
V
CE
=
2
V, I
C
=
20
mA
50
50
5
1
1
100
100
400
0.5
2
80
45
µA
µA
V
V
MHz
pF
f
T
C
ob
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